المؤلفون: Yuhui He, Yi Li, Chih-Yang Lin, Simon M. Sze, Wen-Qian Pan, Hao-Xuan Zheng, Rui Kuang, Xiangshui Miao, Jia Chen, Gui-Rong Feng, Nian Duan, Ting-Chang Chang

المصدر: IEEE Electron Device Letters. 41:353-356

مصطلحات موضوعية: 010302 applied physics, Artificial neural network, business.industry, Computer science, Transistor, Memristor, 01 natural sciences, Convolutional neural network, Electronic, Optical and Magnetic Materials, law.invention, Computer Science::Emerging Technologies, Software, law, Robustness (computer science), 0103 physical sciences, Electronic engineering, Electrical and Electronic Engineering, Resistor, business, MNIST database

الوصف: Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO2/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (< 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d2f3724b813fefda9e1e39efd075a912
https://doi.org/10.1109/led.2020.2968388

المؤلفون: Alexander A. Balandin, Adane K. Geremew, Alexander Khitun

المصدر: Khitun, Alexander G.; Geremew, Adane K.; & Balandin, Alexander A.(2018). Transistor-Less Logic Circuits Implemented With2-D Charge Density Wave Devices. IEEE ELECTRON DEVICE LETTERS, 30(9). UC Office of the President: UC Lab Fees Research Program (LFRP); a funding opportunity through UC Research Initiatives (UCRI). Retrieved from: http://www.escholarship.org/uc/item/5989z5c6

مصطلحات موضوعية: Materials science, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, Condensed Matter::Superconductivity, 0103 physical sciences, Physical Sciences and Mathematics, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Electronic circuit, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Hysteresis, Logic gate, Optoelectronics, Inverter, Condensed Matter::Strongly Correlated Electrons, Resistor, 0210 nano-technology, business, Charge density wave, Hardware_LOGICDESIGN, Voltage

الوصف: We propose logic gates and circuits implemented with 2-D charge density wave (CDW) devices, which operate at room temperature. The 1T-TaS2 charge density wave devices exhibit a voltage triggered phase transition between the nearly commensurate and incommensurate CDW states, which is accompanied by an abrupt change of the resistance and hysteresis. The unique output characteristics of such devices allow for building logic gates and circuits without any transistors. Using the experimentally measured current–voltage characteristics, we model and numerically simulate the performance of the inverter and the OR logic gates consisting of CDW devices and regular resistors. Owing to the radiation-hard nature of the CDW devices and absence of transistors, the proposed circuits can be utilized in various harsh environments on earth or outer space.

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29b596c8f2cc3ffb831a41632f9a0d15
https://doi.org/10.1109/led.2018.2858244

المؤلفون: Yu Han, Kei May Lau, Qiang Li

المصدر: IEEE Electron Device Letters. 38:556-559

مصطلحات موضوعية: Materials science, Silicon, Physics::Instrumentation and Detectors, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Substrate (electronics), 01 natural sciences, law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, Load line, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Tunnel diode, Hardware_ARITHMETICANDLOGICSTRUCTURES, Electrical and Electronic Engineering, Quantum tunnelling, Diode, 010302 applied physics, business.industry, Electrical engineering, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Hysteresis, chemistry, Optoelectronics, Resistor, 0210 nano-technology, business, Hardware_LOGICDESIGN

الوصف: We report the fabrication and characterization of a GaAs fin-array tunneling trigger monolithically integrated on an exact (001) silicon substrate. A Schmitt-trigger-like behavior was observed under double sweep condition by connecting the tunnel diode with an on-chip load resistor. The tunneling trigger circuit was studied using load line analysis. Critical parameters of the circuit were extracted. We found that the circuit hysteresis can be tuned by tailoring of the diode dimensions and load resistor values.

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48a8b96448cbfb4a38732858014e185c
https://doi.org/10.1109/led.2017.2689027

المؤلفون: Guo-Qiang Lo, Fei Sun, Ning Duan

المصدر: IEEE Electron Device Letters. 34:653-655

مصطلحات موضوعية: Quenching, Materials science, Physics::Instrumentation and Detectors, business.industry, Electrical engineering, Physics::Physics Education, Order (ring theory), Computer Science::Other, Electronic, Optical and Magnetic Materials, law.invention, Computer Science::Emerging Technologies, Silicon photomultiplier, law, Optoelectronics, Fill factor, Electrical and Electronic Engineering, Resistor, business, Layer (electronics), Photon detection

الوصف: A novel structure of silicon photomultiplier (SiPM) is reported. In this structure, a vertical bulk-Si quenching resistor is introduced to replace the poly-Si resistor in the SiPM cell, which can help to improve the fill factor of the SiPM for more efficient photon detection. A current-blocking layer is inserted into the resistor layer to reduce the cross-section of the resistor so that the necessary high quenching resistance can be achieved by the thin resistor layer. The performance of the SiPM cell is confirmed by simulation. The vertical bulk-Si resistors are fabricated and characterized. According to the $I{-}V$ measurements, the structures achieved show good resistor properties. An equivalent quenching resistance in the order of $10^{5}~\Omega$ is observed in a 1- $\mu{\rm m}$ -thick resistor.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::98c1a6c0088e3458fb61b6d19480cbcb
https://doi.org/10.1109/led.2013.2250900

المؤلفون: Edmundo A. Gutierrez-D, Gilbert Declerck, Ludo Deferm

المصدر: IEEE Electron Device Letters. 14:152-154

مصطلحات موضوعية: Materials science, business.industry, Transistor, Analytical chemistry, Biasing, Substrate (electronics), Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, law.invention, PMOS logic, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, CMOS, law, Optoelectronics, Inverter, Electrical and Electronic Engineering, Resistor, business, NMOS logic

الوصف: Self-heating (SH) in submicrometer CMOS transistors operated at liquid-helium temperature and under different bias conditions was experimentally verified by measuring the temperature T/sub Si/ in the proximity of the device. T/sub Si/ was measured by using a silicon resistor, placed in the same bulk nearby the device under test, as a temperature sensor. It was found that the heat generated by the NMOS transistor of a CMOS inverter structure penetrates deep into the substrate and reduces very strongly the n-well impedance, giving rise to large variations in the kink of the I/sub drain/-V/sub drain/ characteristics of the neighbor PMOS transistor. Experimental results confirm that SH must not be underestimated when characterizing and modeling low-temperature device operation. >

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::07fe93dff2b404982b3bada254291827
https://doi.org/10.1109/55.215141

المؤلفون: D. Heidel, T.R. Gheewala

المصدر: IEEE Electron Device Letters. 3:93-96

مصطلحات موضوعية: Physics, Josephson effect, Pass transistor logic, business.industry, Electrical engineering, Biasing, Hardware_PERFORMANCEANDRELIABILITY, Dissipation, Electronic, Optical and Magnetic Materials, law.invention, Computer Science::Emerging Technologies, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Resistor, business, Hardware_LOGICDESIGN, Electronic circuit, Voltage

الوصف: A self-biasing network for Josephson logic circuits that permits wide variations in junction critical currents, resistors, and power supply voltage is presented. The self-biasing network automatically switches resistors in or out to make the gate currents track with the critical currents of the logic gates. Results of Monte Carlo statistical analyses of the tolerances of this scheme are presented as a function of amount of correlation between the critical currents of the logic device and the biasing network, amount of systematic variation on a chip, and number of junctions used in the biasing network. Results indicate that almost a factor of two larger variations in the critical currents of the Josephson junctions can be tolerated when the self-biasing network is used, without adverse impact on the gate delays and the power dissipation.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eb7f0f87a92234de676753619b605bc6
https://doi.org/10.1109/edl.1982.25492

المؤلفون: Robert D. Burnham, T. K. Woodward, H.F. Chung, T. C. McGill

المصدر: IEEE Electron Device Letters. 9:122-124

مصطلحات موضوعية: business.industry, Chemistry, Negative resistance, Frequency multiplier, Transistor, Electrical engineering, Heterojunction, Chemical vapor deposition, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, law.invention, Computer Science::Emerging Technologies, law, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, Resistor, business, Quantum tunnelling

الوصف: Flip-flop and frequency-doubling operations are demonstrated, using a simple circuit that combines a resistor with a three-terminal negative-resistance device. The device is a series integration of resonant-tunneling heterostructure with a field-effect transistors. Results, obtained at 77 K, are presented for two samples that were grown by metalorganic chemical vapor deposition. >

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b4ef6d04fb2a2b6eea242384240d8810
https://doi.org/10.1109/55.2062

المؤلفون: W.F. Kopp, Mukunda B. Das, Hadis Morkoç, S.-M.J. Liu

المصدر: IEEE Electron Device Letters. 6:594-596

مصطلحات موضوعية: Electron mobility, Materials science, Equivalent series resistance, business.industry, Analytical chemistry, Schottky diode, Biasing, High-electron-mobility transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, law.invention, Condensed Matter::Materials Science, Computer Science::Emerging Technologies, law, Parasitic element, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, Resistor, business

الوصف: Two-dimensional (2-D) electron-gas carrier mobiliy in 1µm gate-length modulation-doped FET's has been determined as a function of the gate bias voltage. The measurement technique utilizes a small-signal gate voltage excitation and probes the true channel conductance by directly eliminating the source and drain series resistance effects. The mobility is extracted by combining the channel conductance data with the CV data and its variation with gate bias voltage is indicative of the variation of the effectiveness of screening of the ionized impurities and the quality of the MBE-grown GaAs buffer layer.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::773b28f294a6884d5bdba964107489f5
https://doi.org/10.1109/edl.1985.26242