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المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Dispositifs Intégrés et Circuits Electroniques Machine Learning Group (DICE - MLG), Université Catholique de Louvain = Catholic University of Louvain (UCL), Contrat Européen, Université Catholique de Louvain-la-Neuve
المصدر: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, 2009, 8 (9), pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8 (9), pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8, pp.737-748. ⟨10.1109/TNANO.2009.2021653⟩مصطلحات موضوعية: FOS: Computer and information sciences, Materials science, Nanowire, Computer Science - Emerging Technologies, FOS: Physical sciences, 02 engineering and technology, Integrated circuit, 01 natural sciences, scaling limits, Flash memory, non volatile memories, device scaling, law.invention, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Memory cell, law, 0103 physical sciences, Electronic engineering, Process optimization, Electrical and Electronic Engineering, 010302 applied physics, Condensed Matter - Materials Science, business.industry, Materials Science (cond-mat.mtrl-sci), quantum dot, 021001 nanoscience & nanotechnology, Computer Science Applications, Non-volatile memory, Emerging Technologies (cs.ET), Nanoelectronics, Quantum dot, single-electron device, silicon on insulator technology (SOI), flash memories, Optoelectronics, 0210 nano-technology, business, Process modeling