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المؤلفون: P. Pellegrino, V. Privitera, Anders Hallén, Patrick Lévêque, B. G. Svensson
المصدر: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
186 (2002): 375–379. doi:10.1016/S0168-583X(01)00897-7
info:cnr-pdr/source/autori:Leveque P., Hallen A., Pellegrino P., Svensson B.G., Privitera V./titolo:Dose-rate influence on the defect production in mev proton-implanted float-zone and epitaxial n-type silicon/doi:10.1016%2FS0168-583X(01)00897-7/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2002/pagina_da:375/pagina_a:379/intervallo_pagine:375–379/volume:186مصطلحات موضوعية: Nuclear and High Energy Physics, silicon, proton-implantation, dose-rate, DLTS, Materials science, Silicon, Proton, Diffusion, Analytical chemistry, chemistry.chemical_element, Epitaxy, Crystallographic defect, Oxygen, chemistry, Limiting oxygen concentration, Irradiation, Instrumentation