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المؤلفون: I. Gorczyca, N. E. Christensen, Axel Svane
المصدر: Gorczyca, I, Svane, A & Christensen, N E 1999, ' Theory of point defects in GaN, AlN and BN: Relaxation and pressure effects ', Physical Review B, bind 60, s. 8147 .
مصطلحات موضوعية: Condensed Matter::Materials Science, Materials science, Dopant, Condensed matter physics, Ab initio quantum chemistry methods, Band gap, Relaxation (NMR), Physics::Atomic and Molecular Clusters, Supercell (crystal), Electronic structure, Crystallographic defect
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d32fd8430de05a8f218d5fe7efe4b888
https://pure.au.dk/portal/da/publications/theory-of-point-defects-in-gan-aln-and-bn-relaxation-and-pressure-effects(45145f00-9737-11db-bee9-02004c4f4f50).html -
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