المؤلفون: Nicolas Reckinger, Guilhem Larrieu, Jean-Pierre Raskin, Aryan Afzalian, Emmanuel Dubois, Xiaohui Tang, Denis Flandre

المساهمون: IEMN - ISEN, LAAS - CNRS, UCL - SST/ICTM - Institute of Information and Communication Technologies, Electronics and Applied Mathematics, UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Catholique de Louvain = Catholic University of Louvain (UCL)

المصدر: Applied Physics Letters, Vol. 98, no. 11, p. 112102 (16 March 2011)
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98, pp.112102-1-3. ⟨10.1063/1.3567546⟩
Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩

مصطلحات موضوعية: Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Dopant, business.industry, Schottky barrier, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Schottky diode, Field emission, chemistry.chemical_compound, chemistry, Silicide, Optoelectronics, Tunneling current, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Current (fluid), business, Nanoscopic scale, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8298f89210e1a53dd1c9b0954a30ff9b
https://hdl.handle.net/2078.1/70970

المؤلفون: A. Łaszcz, Emmanuel Dubois, Nicolas Reckinger, Dmitri A. Yarekha, Jean-Pierre Raskin, Guilhem Larrieu, Pascal Jacques, Xiaohui Tang, Jacek Ratajczak, Xavier Wallart, Sylvie Godey, Vincent Bayot

المساهمون: UCL - FSA/ELEC - Département d'électricité, Université Catholique de Louvain = Catholic University of Louvain (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

المصدر: Journal of Applied Physics, Vol. 104, no. 10, p. 103523 (2008)
Journal of Applied Physics
Journal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩
Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.103523-1-9. ⟨10.1063/1.3010305⟩

مصطلحات موضوعية: semiconductor-insulator boundaries, Materials science, Annealing (metallurgy), oxidation, Schottky barrier, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, chemical interdiffusion, 01 natural sciences, rapid thermal annealing, Vacuum deposition, erbium compounds, 0103 physical sciences, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Doping, semiconductor-metal boundaries, 021001 nanoscience & nanotechnology, Schottky barriers, chemistry, X-ray crystallography, 0210 nano-technology, Forming gas, Titanium

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bac26ab70f72fd414c90636c49a7b3d3
https://hdl.handle.net/2078.1/85667