المؤلفون: Nicolas Breil, Jacek Ratajczak, A. Laszcz, D.A. Yarekha, Xiaohui Tang, Emmanuel Dubois, Nicolas Reckinger, Guilhem Larrieu

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

المصدر: Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2008, 154-155, pp.159-162. ⟨10.1016/j.mseb.2008.10.014⟩
European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices
European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France
Materials Science and Engineering: B, 2008, 154-155, pp.159-162. ⟨10.1016/j.mseb.2008.10.014⟩

مصطلحات موضوعية: 010302 applied physics, Electron mobility, Materials science, Dopant, business.industry, Mechanical Engineering, Schottky barrier, Doping, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Platinum silicide, chemistry.chemical_compound, Band bending, chemistry, Mechanics of Materials, 0103 physical sciences, MOSFET, Optoelectronics, General Materials Science, Field-effect transistor, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d83cc4a72efe305cb63584308d2e68
https://doi.org/10.1016/j.mseb.2008.10.014