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المؤلفون: Matthieu Paillet, Luc Henrard, Bruno Majérus, Nicolas Reckinger, Philippe Lambin, Michaël Lobet, Mirko Cormann
المساهمون: Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
المصدر: 2D Materials
2D Materials, IOP Publishing, 2018, 5 (2), pp.025007. ⟨10.1088/2053-1583/aaa574⟩
Majerus, B, Cormann, M, Reckinger, N, Paillet, M, Henrard, L, Lambin, P & Lobet, M 2018, ' Modified Brewster angle on conducting 2D materials ', 2D Materials, vol. 5, no. 2, 025007 . https://doi.org/10.1088/2053-1583/aaa574مصطلحات موضوعية: Materials science, 02 engineering and technology, Substrate (electronics), Conductivity, 01 natural sciences, Optical conductivity, law.invention, symbols.namesake, law, 2D conducting materials, non-contact measurement, 0103 physical sciences, General Materials Science, 010306 general physics, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Range (particle radiation), Brewster's angle, business.industry, Graphene, Mechanical Engineering, Numerical analysis, Fermi level, graphene, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Brewster angle, Mechanics of Materials, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, conductivity, 0210 nano-technology, business
وصف الملف: application/pdf
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المؤلفون: Jean-Pierre Raskin, Maud Vinet, Xiaohui Tang, Florent Ravaux, Louis Hutin, Zhenkun Chen, Nicolas Reckinger, Emmanuel Dubois
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université Catholique de Louvain = Catholic University of Louvain (UCL), Deleonibus S.
المصدر: Intelligent integrated systems : technologies, devices and architectures
Deleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 0103 physical sciences, Schottky diode, Optoelectronics, business, 01 natural sciences
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eeb1e48fc96c317db16a76aba6f10d4b
https://hal.science/hal-00878461 -
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المؤلفون: Constantin Augustin Dutu, Jean-Pierre Raskin, Claude Poleunis, Xiaohui Tang, Emmanuel Dubois, Nicolas Reckinger, Arnaud Delcorte
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Catholique de Louvain = Catholic University of Louvain (UCL)
المصدر: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 99, pp.012110-1-3. ⟨10.1063/1.3608159⟩
Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩مصطلحات موضوعية: 010302 applied physics, Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Dopant, Annealing (metallurgy), Schottky barrier, Analytical chemistry, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ion, Erbium, chemistry, 0103 physical sciences, Redistribution (chemistry), 0210 nano-technology, Arsenic
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المؤلفون: Jacek Ratajczak, Aomar Halimaoui, D.A. Yarekha, Sylvie Godey, Xiaohui Tang, A. Laszcz, Nicolas Breil, Xavier Wallart, Denis Remiens, Caroline Soyer, Guilhem Larrieu, Nicolas Reckinger, Emmanuel Dubois
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
المصدر: ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩
ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩مصطلحات موضوعية: 010302 applied physics, Ytterbium, Ultra thin body, Fabrication, Materials science, Silicon, business.industry, Schottky barrier, chemistry.chemical_element, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, chemistry, 0103 physical sciences, Silicide, MOSFET, Electronic engineering, Optoelectronics, 0210 nano-technology, business
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المؤلفون: Emmanuel Dubois, Xiaohui Tang, Bernard Nysten, Vincent Bayot, Nicolas Reckinger, Jean-Pierre Raskin, Denis Flandre
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
المصدر: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩
IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩مصطلحات موضوعية: 010302 applied physics, Fin, Materials science, Silicon, business.industry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science Applications, chemistry, Gate oxide, Etching (microfabrication), 0103 physical sciences, MOSFET, Surface roughness, Optoelectronics, Electrical and Electronic Engineering, Reactive-ion etching, 0210 nano-technology, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25f23faf6018f585b77bc22ff3315828
https://hal.archives-ouvertes.fr/hal-00471972
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المؤلفون: J. Kątcki, D.A. Yarekha, J. Ratajczak, Guilhem Larrieu, Xiaohui Tang, Emmanuel Dubois, Andrzej Czerwiński, Nicolas Reckinger, A. Łaszcz
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
المصدر: Acta Physica Polonica A
Acta Physica Polonica A, Polish Academy of Sciences. Institute of Physics, 2009, 116, pp.89-91
Scopus-Elsevier
Acta Physica Polonica A, 2009, 116, pp.89-91
ResearcherIDمصطلحات موضوعية: 010302 applied physics, Nanostructure, Materials science, Fabrication, Silicon, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Characterization (materials science), Fin (extended surface), chemistry.chemical_compound, chemistry, Transmission electron microscopy, 0103 physical sciences, Silicide, 0210 nano-technology
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0677a2f87c56e4171cf58b4dbe13fe1b
https://hal.archives-ouvertes.fr/hal-00472000 -
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المؤلفون: Vincent Bayot, Nicolas Reckinger, Emmanuel Dubois, Raúl Rengel, María J. Martín, Xiaohui Tang, Elena Pascual
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
المصدر: physica status solidi (c)
physica status solidi (c), 2008, 5, pp.119-122. ⟨10.1002/pssc.200776519⟩
physica status solidi (c), Wiley, 2008, 5, pp.119-122. ⟨10.1002/pssc.200776519⟩مصطلحات موضوعية: 010302 applied physics, Condensed matter physics, Chemistry, Scattering, Schottky barrier, Monte Carlo method, Schottky diode, Nanotechnology, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Depletion region, Electric field, 0103 physical sciences, 0210 nano-technology, Current density, Quantum tunnelling
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المؤلفون: Nicolas Reckinger, Emmanuel Dubois, Alexandre Villaret, Xiaohui Tang, Christophe Krzeminski, D.-C. Bensahel, Vincent Bayot
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Dispositifs Intégrés et Circuits Electroniques Machine Learning Group (DICE - MLG), Université Catholique de Louvain = Catholic University of Louvain (UCL), STMicroelectronics [Crolles] (ST-CROLLES), contrat européen
المصدر: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5, pp.649-656
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩
IEEE Transactions on Nanotechnology, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩
IEEE Transactions on Nanotechnology, 2006, 5, pp.649-656مصطلحات موضوعية: Materials science, Fabrication, single-electron memory, FOS: Physical sciences, 02 engineering and technology, Engraving, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Coulomb blockade effect, 010302 applied physics, Condensed Matter - Materials Science, Quantum Physics, nanotechnology, business.industry, Process (computing), Electrical engineering, Materials Science (cond-mat.mtrl-sci), Coulomb blockade, 021001 nanoscience & nanotechnology, arsenic-assisted etching and oxidation effects, Computer Science Applications, Non-volatile memory, Nanoelectronics, visual_art, visual_art.visual_art_medium, Optoelectronics, Non-volatile random-access memory, Quantum Physics (quant-ph), 0210 nano-technology, business, self-aligned floating gate
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a44041cc66ef34051e0898252d54bdd2
https://hal.archives-ouvertes.fr/hal-00138655
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المؤلفون: Vincent Bayot, André Crahay, Nicolas Reckinger, Christophe Krzeminski, Xiaohui Tang, Emmanuel Dubois
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Dispositifs Intégrés et Circuits Electroniques Machine Learning Group (DICE - MLG), Université Catholique de Louvain = Catholic University of Louvain (UCL), Financement européen, projet européen SASEM
المصدر: 2004 Materials and Processes for Nonvolatile Memories Symposium-Materials Research Society Symposium Proceedings
Mater. Res. Soc. Symp. Proc.
Materials Research Society Fall Meeting
Materials Research Society Fall Meeting, Nov 2004, Boston, United States. pp.D1.6.1
Scopus-Elsevierمصطلحات موضوعية: Fabrication, Materials science, Process modeling, 020209 energy, Nanowire, Mechanical engineering, FOS: Physical sciences, Nanotechnology, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, scaling limits, Flash memory, device scaling, non volatile memories, Nano, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Condensed Matter - Materials Science, Process (computing), Materials Science (cond-mat.mtrl-sci), quantum dot, 021001 nanoscience & nanotechnology, Quantum dot, single-electron device, silicon on insulator technology (SOI), flash memories, 0210 nano-technology, Hardware_LOGICDESIGN
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98ea9e08ca5afc0c7014a01e26450343
https://hal.archives-ouvertes.fr/hal-00140991 -
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المؤلفون: Pierre Loumaye, O. Nisole, Guilhem Larrieu, J. Ratajczak, Emmanuel Dubois, Nicolas Reckinger, J. Katcki, Xiaohui Tang, Vincent Bayot
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
المصدر: Solid-State Electronics
Solid-State Electronics, 2003, 47, pp.2105-2111
Solid-State Electronics, Elsevier, 2003, 47, pp.2105-2111مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Schottky barrier, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Metal–semiconductor junction, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Stack (abstract data type), chemistry, 0103 physical sciences, MOSFET, Silicide, Materials Chemistry, Electronic engineering, Electrical and Electronic Engineering, 0210 nano-technology, Layer (electronics)
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