المؤلفون: Tianxiang Dai, Hua Rong, Fan Li, Yogesh K. Sharma, David Martin, Michael R. Jennings, Stephen A. O. Russell, Philip Mawby

المصدر: Materials Science Forum. 858:623-626

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Annealing (metallurgy), Mechanical Engineering, Electrical engineering, Field effect, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Lower temperature, law.invention, Threshold voltage, Capacitor, Mechanics of Materials, law, Post oxidation, 0103 physical sciences, MOSFET, Trap density, Optoelectronics, General Materials Science, 0210 nano-technology, business

الوصف: This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly in N2O environment or in O2 ambient followed by a N2O post oxidation annealing process. Different nitridation temperatures of 1200°C, 1300°C, 1400°C and 1500°C have been investigated. Results have demonstrated that at high temperature (>1200°C) there is a significant improvement in the interface trap density (~1.5×1011 cm-2eV-1 at 0.2 eV) and field effect channel mobility (19 cm2/V.s) of 4H-SiC MOSFET compare with those at lower temperature (1×1012 cm-2eV-1 at 0.2 eV and 4 cm2/V.s). Among those nitridation temperatures, 1300°C has found to be the most effective in increasing the field effect channel mobility and reducing threshold voltage.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::01750b09cf19828302d5954d2aff92a9
https://doi.org/10.4028/www.scientific.net/msf.858.623