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1
المؤلفون: Daniel Alvarez, Ravi Droopad, Jun Hong Park, Evgueni Chagarov, Russell J. Holmes, Andrew C. Kummel, Tyler Kent, Mary Edmonds, Steven Wolf
المصدر: Surface Science. 660:31-38
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Band gap, Scanning tunneling spectroscopy, Binding energy, Analytical chemistry, Nucleation, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Surfaces and Interfaces, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, X-ray photoelectron spectroscopy, chemistry, Gate oxide, 0103 physical sciences, Materials Chemistry, 0210 nano-technology
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2
المؤلفون: Ximan Jiang, Mary Edmonds, Andrew C. Kummel, Naomi Yoshida, Rohit Galatage, Shariq Siddiqui, Lin Dong, Steven Wolf, Ravi Droopad, Bhagawan Sahu
المصدر: ECS Transactions. 72:291-302
مصطلحات موضوعية: Materials science, Flux (metallurgy), chemistry, Torr, Analytical chemistry, chemistry.chemical_element, Plasma, Gas composition, Carbon, Oxygen, Standard enthalpy of formation, Deposition (law)
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3
المؤلفون: Shafiqur Rahman, Manuel Caro, Javad R. Gatabi, Byounghak Lee, Kevin Lyon, J.S. Rojas-Ramirez, Ravi Droopad, Joelson Cott-Garcia
المصدر: Microelectronic Engineering. 147:117-121
مصطلحات موضوعية: Spin coating, Materials science, business.industry, Inorganic chemistry, Nucleation, Oxide, Condensed Matter Physics, Epitaxy, Ferroelectricity, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Barium titanate, Optoelectronics, Electrical and Electronic Engineering, business, Single crystal, Molecular beam epitaxy
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4
المصدر: Journal of Crystal Growth. 425:262-267
مصطلحات موضوعية: Materials science, Silicon, Infrared, business.industry, Nucleation, chemistry.chemical_element, Condensed Matter Physics, Inorganic Chemistry, CMOS, chemistry, Materials Chemistry, Surface roughness, Optoelectronics, Wafer, Dislocation, business, Layer (electronics)
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5
المؤلفون: Chris Hobbs, Sean L. Rommel, Wei-Yip Loh, Kausik Majumdar, Paul Thomas, R. Contreras-Guerrero, Abhinav Gaur, Enri Marini, Man Hoi Wong, Kunal Bhatnagar, Ravi Droopad, Matthew J. Filmer, Brian Romanczyk, D. Pawlik
المصدر: IEEE Transactions on Electron Devices. 62:2450-2456
مصطلحات موضوعية: Materials science, Silicon, business.industry, Doping, chemistry.chemical_element, Substrate (electronics), Temperature measurement, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Si substrate, Indium phosphide, Optoelectronics, Electrical and Electronic Engineering, business, Molecular beam epitaxy, Diode
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6
المؤلفون: Timothy Vasen, Yang-Sih Chang, Stephen Thoms, Gordon C. H. Hsieh, Peter Ramvall, Yee-Chia Yeo, Gerben Doornbos, S. Wang, Chien-Hsun Wang, Georgios Vellianitis, Richard Kenneth Oxland, Carlos H. Diaz, Martin Christopher Holland, Xu Li, Iain G. Thayne, Kaimin M. Yin, Douglas Macintyre, Shang-Wen Chang, Ravi Droopad, M. Edirisooriya, Matthias Passlack, R. Contreras-Guerrero, J.S. Rojas-Ramirez
المصدر: IEEE Transactions on Electron Devices. 62:2429-2436
مصطلحات موضوعية: Negative voltage, business.industry, Chemistry, Electrical engineering, Gate stack, Gate length, Field effect, Equivalent oxide thickness, Electron, Electronic, Optical and Magnetic Materials, State density, Subthreshold swing, Electrical and Electronic Engineering, Atomic physics, business
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7
المؤلفون: M. Chang, Jessica S. Kachian, Kasra Sardashti, Jun Hong Park, Ravi Droopad, Andrew C. Kummel, Evgueni Chagarov, Tyler Kent, Mary Edmonds
المصدر: Journal of the American Chemical Society. 137:8526-8533
مصطلحات موضوعية: Silicon, Passivation, Chemistry, Hydride, Inorganic chemistry, Dangling bond, chemistry.chemical_element, General Chemistry, Chemical vapor deposition, Substrate (electronics), Biochemistry, Catalysis, Colloid and Surface Chemistry, Chemical engineering, Gate oxide, Layer (electronics)
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8
المؤلفون: Evgeniy Chagarov, Ravi Droopad, Andrew C. Kummel, Tyler Kent, Mary Edmonds
المصدر: ACS Nano. 9:4843-4849
مصطلحات موضوعية: Materials science, Passivation, business.industry, Transistor, Fermi level, Inorganic chemistry, General Engineering, Oxide, General Physics and Astronomy, equipment and supplies, law.invention, Condensed Matter::Materials Science, symbols.namesake, chemistry.chemical_compound, Semiconductor, chemistry, law, symbols, Optoelectronics, General Materials Science, Density functional theory, Scanning tunneling microscope, business, Metallic bonding
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9
المؤلفون: Mary Edmonds, Andrew C. Kummel, Tyler Kent, Ravi Droopad
المصدر: Solid State Phenomena. 219:47-51
مصطلحات موضوعية: Materials science, Hydrogen, business.industry, Fermi level, Oxide, Analytical chemistry, chemistry.chemical_element, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, law.invention, symbols.namesake, chemistry.chemical_compound, Semiconductor, chemistry, law, MOSFET, symbols, Optoelectronics, General Materials Science, Field-effect transistor, Scanning tunneling microscope, business, Molecular beam epitaxy
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10
المؤلفون: Kechao Tang, Felix Palumbo, Liangliang Zhang, Paul C. McIntyre, Ravi Droopad
المصدر: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICETمصطلحات موضوعية: Fabrication, Materials science, Hydrogen, Passivation, Ciencias Físicas, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, purl.org/becyt/ford/1 [https], Trap (computing), Condensed Matter::Materials Science, 0103 physical sciences, MOSCAP, General Materials Science, Physics::Atomic Physics, Deposition (law), INTERFACE TRAPS, 010302 applied physics, business.industry, AL2O3, HYDROGEN DEPASSIVATION, purl.org/becyt/ford/1.3 [https], 021001 nanoscience & nanotechnology, BORDER TRAPS, INGAAS, Astronomía, Hysteresis, chemistry, RELIABILITY, Optoelectronics, 0210 nano-technology, Forming gas, business, Layer (electronics), CIENCIAS NATURALES Y EXACTAS
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ed54a005fe6dd6d0a8c215ab0a5984
https://pubs.acs.org/doi/10.1021/acsami.6b16232