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المؤلفون: Ivana Capan, Lis K. Nanver, Tomislav Suligoj, Tihomir Knezevic
المساهمون: Integrated Devices and Systems
المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 68(6), 2810-2817. IEEEمصطلحات موضوعية: Junctions, ultrashallow junctions, Silicon, Materials science, chemistry.chemical_element, pure boron (PureB) diodes, 01 natural sciences, law.invention, Single-photon avalanche diodes, law, 0103 physical sciences, Doping, Breakdown voltage, interface charge, photodiode, Electrical and Electronic Engineering, Photodiodes, Diode, 010302 applied physics, Equivalent series resistance, business.industry, cryogenic measurement, Schottky diode, Computational modeling, Electronic, Optical and Magnetic Materials, Photodiode, thin-film boron layers, chemistry, Performance evaluation, Optoelectronics, single-photon avalanche diode (SPAD), business, Aluminum, Dark current
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e6872be007d1859f40d9de6e0f94b52
https://doi.org/10.1109/ted.2021.3074117
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المؤلفون: D. Thammaiah Shivakumar, Tihomir Knežević, Lis K. Nanver
المساهمون: MESA+ Institute, Integrated Devices and Systems
المصدر: Shivakumar, D T, Knežević, T & Nanver, L K 2021, ' Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si ', Journal of Materials Science: Materials in Electronics, vol. 32, no. 6, pp. 7123-7135 . https://doi.org/10.1007/s10854-021-05422-7
Journal of Materials Science: Materials in Electronics, 32(6), 7123-7135. Springerمصطلحات موضوعية: Materials science, Silicon, aluminum (Al), electron-beam-assisted physical vapor deposition (EBPVD), copper (Cu), gold (Au), material barrier, boron thin-films, ultrashallow junctions, UT-Hybrid-D, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Electron beam physical vapor deposition, Aluminium, 0103 physical sciences, Electrical and Electronic Engineering, Boron, Deposition (law), 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Copper, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Physical vapor deposition, Optoelectronics, Nanometre, 0210 nano-technology, business
وصف الملف: application/pdf
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المؤلفون: Lin Qi, Xingyu Liu, Tihomir Knežević, Lis K. Nanver
المساهمون: Integrated Devices and Systems, MESA+ Institute
المصدر: Solid-state electronics, 186:108041. Elsevier
مصطلحات موضوعية: Silicon, Materials science, Extreme ultraviolet lithography, UT-Hybrid-D, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, law.invention, Ultrashallow junctions, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Boron, Lithography, Photodiodes, Diode, 010302 applied physics, Pure boron, business.industry, Pure gallium, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Acceptor, Electronic, Optical and Magnetic Materials, Photodiode, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business
وصف الملف: application/pdf
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المؤلفون: Erwin Hardeveld, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Tihomir Knezevic
المصدر: IEEE electron device letters, 40(6):8686173, 858-861. IEEE
مصطلحات موضوعية: Silicon, Materials science, Analytical chemistry, chemistry.chemical_element, Chemical vapor deposition, 01 natural sciences, Photodiode, Ultrashallow junctions, Saturation current, 0103 physical sciences, Monolayer, Electron injection, Electrical and Electronic Engineering, Boron, Quantum tunnelling, Diode, 010302 applied physics, chemical-vapor deposition, electron injection, monolayer, photodiodes, pure boron, silicon, ultrashallow junction, Chemical-vapor deposition, 22/4 OA procedure, Acceptor, Pure boron (PureB), Electronic, Optical and Magnetic Materials, chemistry
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6372318a1550437214f8376f13699cc5
https://doi.org/10.1109/led.2019.2910465
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المؤلفون: Shannan Chang, Yaping Dan, Chufan Zhang
المصدر: Advances in Physics: X, Vol 6, Iss 1 (2021)
مصطلحات موضوعية: Materials science, molecular monolayer doping, Silicon, QC1-999, ultrashallow junctions, General Physics and Astronomy, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, Quantum devices, law.invention, Condensed Matter::Materials Science, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, molecular beam epitaxy, law, Condensed Matter::Superconductivity, Hardware_INTEGRATEDCIRCUITS, ion implantation, Quantum computer, business.industry, Physics, Doping, Transistor, sub-second thermal annealing, Ion implantation, chemistry, ComputerSystemsOrganization_MISCELLANEOUS, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, business, Hardware_LOGICDESIGN, Molecular beam epitaxy
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المؤلفون: Lis K. Nanver, Tihomir Knezevic, Tomislav Suligoj
المساهمون: Petar Biljanović
المصدر: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings, 72-76
STARTPAGE=72;ENDPAGE=76;TITLE=2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings
MIPROمصطلحات موضوعية: 010302 applied physics, Materials science, Thin layers, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, interface barrier, hole layer, perimeter effects, ultrashallow junctions, 020210 optoelectronics & photonics, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Nanometre, Electric potential, Boron, business, Current density, Ohmic contact, Diode
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f51a062c5c0237a1b9be8dec45933cb
http://www.scopus.com/inward/record.url?scp=85027696765&partnerID=8YFLogxK -
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المؤلفون: F. Sarubbi, Lis K. Nanver, T.L.M. Scholtes
المصدر: Journal of Electronic Materials, 39 (2), 2010
مصطلحات موضوعية: Boron (B), Silicon, chemical vapor deposition (CVD), Chemistry, Doping, Analytical chemistry, ultrashallow junctions, chemistry.chemical_element, Chemical vapor deposition, Substrate (electronics), Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Secondary ion mass spectrometry, chemistry.chemical_compound, silicon doping, Materials Chemistry, Electrical and Electronic Engineering, diborane (B2H6), Boron, p–n junction, Diborane
وصف الملف: application/pdf
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المؤلفون: Vittorio Privitera
المصدر: Current opinion in solid state & materials science 6 (2002): 55–65. doi:10.1016/S1359-0286(02)00007-4
info:cnr-pdr/source/autori:Privitera V./titolo:Ultra-low energy ion implantation of boron for future silicon devices/doi:10.1016%2FS1359-0286(02)00007-4/rivista:Current opinion in solid state & materials science/anno:2002/pagina_da:55/pagina_a:65/intervallo_pagine:55–65/volume:6مصطلحات موضوعية: Materials science, Silicon, business.industry, chemistry.chemical_element, Nanotechnology, Engineering physics, Ion, Low energy, Ion implantation, chemistry, TRANSIENT-ENHANCED DIFFUSION, P(+)/N JUNCTION FORMATION, ELECTRICAL ACTIVATION, DOPANT DIFFUSION, ULTRASHALLOW JUNCTIONS, CRYSTALLINE SILICON, PHYSICAL-MECHANISMS, EXTENDED DEFECTS, SI, IMPACT, Microelectronics, General Materials Science, business, Boron
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5edca41adcf7b6cab8e6fc1cce7b2f7
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المؤلفون: Maryam Shayesteh, Anne-Marie Kelleher, John Kearney, Ray Duffy, Mary Anne White
المصدر: Applied Physics Letters. 96:231909
مصطلحات موضوعية: Silicon, Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Analytical chemistry, Activation, chemistry.chemical_element, Elemental semiconductors, Germanium, Epitaxy, Annealing, Ultrashallow junctions, Diffusion, Doping, Thermal stability, Sheet resistance, Deactivation, Recrystallization (metallurgy), Phosphorus, Recrystallization, Implantation, Crystallography, chemistry, Defects, Mechanism, Shallow junction
وصف الملف: application/pdf
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