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1مؤتمر
المؤلفون: Nguyen, Ngoc Duy, Loo, Roger, Caymax, Matty
مصطلحات موضوعية: Si-precursor, Trisilane, Low-temperature chemical vapor deposition, Growth rate, n-Type doping, Engineering, computing & technology :: Materials science & engineering, Ingénierie, informatique & technologie :: Science des matériaux & ingénierie
جغرافية الموضوع: international
Relation: Fifth International Symposium on Control of Semiconductor Interfaces, Tokyo, Japan (12-14/11/2007)
URL الوصول: https://orbi.uliege.be/handle/2268/68546