يعرض 1 - 7 نتائج من 7 نتيجة بحث عن '"Mohapatra, N.R."', وقت الاستعلام: 1.38s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Effect of Device Dimensions, Layout and Pre-Gate Carbon Implant on Hot Carrier Induced Degradation in HKMG nMOS Transistors

    المؤلفون: Duhan, P., Rao, V.R., Mohapatra, N.R.

    المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 20(3):555-561 Sep, 2020

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  2. 2
    دورية أكاديمية
    Source Underlap—A Novel Technique to Improve Safe Operating Area and Output-Conductance in LDMOS Transistors

    المؤلفون: Bhoir, M.S., Kaushal, K.N., Panda, S.R., Singh, A.K., Jatana, H.S., Mohapatra, N.R.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(11):4823-4828 Nov, 2019

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  3. 3
    دورية أكاديمية
    Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High- $k$ Metal-Gate nMOS Transistors

    المؤلفون: Mohapatra, N.R., Ganeriwala, M.D., Sivanaresh M., S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(7):2708-2713 Jul, 2016

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  4. 4
    مؤتمر
    An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS Technology

    المؤلفون: Chavan, T., Dutta, S., Mohapatra, N.R., Ganguly, U.

    المصدر: 2018 76th Device Research Conference (DRC) Device Research Conference (DRC), 2018 76th. :1-2 Jun, 2018

    Relation: 2018 76th Device Research Conference (DRC)

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  5. 5
    مؤتمر
    A Complementary RF-LDMOS Architecture Compatible with 0.13 μm CMOS Technology

    المؤلفون: Mohapatra, N.R., Ruecker, H., Ehwald, K.E., Sorge, R., Barth, R., Schley, P., Schmidt, D., Wulf, H.E.

    المصدر: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006

    Relation: 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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  6. 6
    مؤتمر
    The impact of channel engineering on the performance and reliability of LDMOS transistors

    المؤلفون: Mohapatra, N.R., Ehwald, K.E., Barth, R., Rucker, H., Bolze, D., Schley, P., Schmidt, D., Wulf, H.E.

    المصدر: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :481-484 2005

    Relation: Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference

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  7. 7
    مؤتمر
    The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMs

    المؤلفون: Mohapatra, N.R., Nair, D.R., Mahapatra, S., Rao, V.R., Shukuri, S.

    المصدر: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Solid-state device research - ESSDERC '03 European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on. :541-544 2003

    Relation: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03

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