يعرض 1 - 10 نتائج من 22 نتيجة بحث عن '"Rosenbaum E"', وقت الاستعلام: 1.55s تنقيح النتائج
  1. 1
    مؤتمر
    Latch-up Model of Non-collinear PNPN Structures

    المؤلفون: Reiman, C., Jack, N., Rosenbaum, E.

    المصدر: 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2018 40th. :1-9 Sep, 2018

    Relation: 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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  2. 2
    مؤتمر
    A Verilog-A compact model for ESD protection NMOSTs

    المؤلفون: Junjun Li, Joshi, S., Rosenbaum, E.

    المصدر: Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003. Custom integrated circuits Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003. :253-256 2003

    Relation: CICC Custom Integrated Circuits Conference

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  3. 3
    دورية أكاديمية
    Physical Basis for CMOS SCR Compact Models

    المؤلفون: Mertens, R., Rosenbaum, E.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(1):296-302 Jan, 2016

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  4. 4
    مؤتمر
    Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

    المؤلفون: Voldman, S., Juliano, P., Johnson, R., Schmidt, N., Joseph, A., Furkay, S., Rosenbaum, E., Dunn, J., Harame, D., Meyerson, B.

    المصدر: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Reliability physics Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International. :310-316 2000

    Relation: 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual

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  5. 5
    مؤتمر
    Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

    المؤلفون: Voldman, S., Juliano, P., Schmidt, J., Johnson, R., Lanzerotti, L., Joseph, A., Brennan, C., Dunn, J., Harame, D., Rosenbaum, E., Meyerson, B.

    المصدر: Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Electrical overstress/electrostatic discharge symposium Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000. :239-250 2000

    Relation: Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

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  6. 6
    دورية أكاديمية
    Modeling and Understanding of External Latchup in CMOS Technologies—Part I: Modeling Latchup Trigger Current

    المؤلفون: Farbiz, F., Rosenbaum, E.

    المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 11(3):417-425 Sep, 2011

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  7. 7
    دورية أكاديمية
    Modeling and Understanding of External Latchup in CMOS Technologies—Part II: Minority Carrier Collection Efficiency

    المؤلفون: Farbiz, F., Rosenbaum, E.

    المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 11(3):426-432 Sep, 2011

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  8. 8
    مؤتمر
    Substrate modeling and lumped substrate resistance extraction for CMOS ESD/latchup circuit simulation

    المؤلفون: Tong Li, Ching-Han Tsai, Rosenbaum, E., Sung-Mo Kang

    المصدر: Proceedings 1999 Design Automation Conference (Cat. No. 99CH36361) Design automation 99 Design Automation Conference, 1999. Proceedings. 36th. :549-554 1999

    Relation: Proceedings 1999 Design Automation Conference

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  9. 9
    مؤتمر
    Modeling, extraction and simulation of CMOS I/O circuits under ESD stress

    المؤلفون: Tong Li, Ching-Han Tsai, Rosenbaum, E., Sung-Mo Kang

    المصدر: 1998 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and systems Circuits and Systems (ISCAS), 1998 IEEE International Symposium on. 6:389-392 vol.6 1998

    Relation: 1998 IEEE International Symposium on Circuits and Systems (ISCAS)

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  10. 10
    مؤتمر
    Substrate resistance modeling and circuit-level simulation of parasitic device coupling effects for CMOS I/O circuits under ESD stress

    المؤلفون: Li, T., Tsai, C.-H., Rosenbaum, E., Kang, S.-M.

    المصدر: Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347) Electrical overstress/electrostatic discharge Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998. :281-289 1998

    Relation: Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998

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