المؤلفون: Torres-Castanedo, Carlos G., Goronzy, Dominic P., Pham, Thang, McFadden, Anthony, Materise, Nicholas, Das, Paul Masih, Cheng, Matthew, Lebedev, Dmitry, Ribet, Stephanie M., Walker, Mitchell J., Garcia-Wetten, David A., Kopas, Cameron J., Marshall, Jayss, Lachman, Ella, Zhelev, Nikolay, Sauls, James A., Mutus, Joshua Y., McRae, Corey Rae H., Dravid, Vinayak P., Bedzyk, Michael J., Hersam, Mark C.

مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Superconductivity, Physics - Applied Physics, Quantum Physics

الوصف: Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.

URL الوصول: http://arxiv.org/abs/2404.04489

المؤلفون: An, Haechan, Najjar Amiri, Ali, Goronzy, Dominic P., Garcia Wetten, David A., Bedzyk, Michael J., Shakouri, Ali, Hersam, Mark C., Hosseini, Mahdi

المصدر: Applied Physics Letters; 6/24/2024, Vol. 124 Issue 26, p1-7, 7p

مصطلحات موضوعية: PHOTONS, SQUEEZED light, QUANTUM correlations, SEMICONDUCTOR devices, SEMICONDUCTOR materials, ELECTRONIC equipment

مستخلص: Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise limit of classical approaches. We obtain a far-field temperature sensing accuracy of 42 mK after 50 ms of averaging and show that a 256 × 256 pixel image can be constructed with such sensitivity in 10 min. We can further obtain single-shot temperature sensing of 1.6 K after only 10 μ s of averaging, enabling a dynamical study of heat dissipation. Not only do the quantum images provide accurate spatiotemporal information about heat distribution but also the measure of quantum correlation provides additional information, inaccessible by classical techniques, which can lead to a better understanding of the dynamics. We apply the technique to both aluminum and niobium microwires and discuss the applications of the technique in studying electron dynamics at low temperatures. [ABSTRACT FROM AUTHOR]

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