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المصدر: IEEE Transactions on Electron Devices. 69:3990-3996
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2
المصدر: IEEE Transactions on Electron Devices. 67:4152-4157
مصطلحات موضوعية: 010302 applied physics, Physics, Condensed matter physics, Transistor, Doping, Semiconductor device modeling, NAND gate, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, law.invention, law, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Wafer, Electrical and Electronic Engineering, AND gate
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3
المصدر: IEEE Transactions on Electron Devices. 67:1902-1905
مصطلحات موضوعية: Physics, Electron density, Row hammer, Transistor, Interference (wave propagation), Topology, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, law, Node (circuits), Electric potential, Electrical and Electronic Engineering, Dram
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4
المصدر: IEEE Transactions on Electron Devices. 67:929-936
مصطلحات موضوعية: 010302 applied physics, Physics, Condensed matter physics, Tapering, Radius, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, Distribution (mathematics), Amplitude, Electric field, 0103 physical sciences, C++ string handling, Electrical and Electronic Engineering, Word (group theory)
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5
المصدر: IEEE Transactions on Electron Devices. 66:4170-4175
مصطلحات موضوعية: 010302 applied physics, Dynamic random-access memory, Materials science, business.industry, Transistor, NAND gate, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Gate oxide, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business, AND gate, Dram, Leakage (electronics)
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6
المصدر: Japanese Journal of Applied Physics. 61:SC1030
مصطلحات موضوعية: Physics and Astronomy (miscellaneous), General Engineering, General Physics and Astronomy
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7
المؤلفون: W. G. Kim, Daniele Garbin, D. Cellier, Robin Degraeve, Sergiu Clima, S. Kabuyanagi, Mahendra Pakala, A. Cockburn, G. L. Donadio, Andrea Fantini, Wouter Devulder, Gouri Sankar Kar, M. Suzuki, Ludovic Goux, Romain Delhougne
المصدر: 2020 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Very-large-scale integration, Scheme (programming language), Materials science, business.industry, Monte Carlo method, Material Design, 01 natural sciences, Controllability, Fall time, Percolation, 0103 physical sciences, Cluster (physics), Optoelectronics, business, computer, computer.programming_language
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0cdcb8bfe4858a488ad7b70590df0dee
https://doi.org/10.1109/vlsitechnology18217.2020.9265011 -
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المؤلفون: Wouter Devulder, Romain Delhougne, W. G. Kim, Andrea Fantini, Gouri Sankar Kar, Sergiu Clima, Christophe Detavernier, A. Cockburn, Mahendra Pakala, Robin Degraeve, Ludovic Goux, Karl Opsomer, G. L. Donadio, D. Cellier, Daniele Garbin
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Work (thermodynamics), Materials science, business.industry, Material system, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Crystallization temperature, Ab initio quantum chemistry methods, Physical vapor deposition, 0103 physical sciences, Optoelectronics, Wafer, 0210 nano-technology, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::310b449b2b421dd6dc7c2ce077a73ade
https://doi.org/10.1109/iedm19573.2019.8993547 -
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المؤلفون: Yuan Xie, Jimmy Kan, Mahendra Pakala, Jaesoo Ahn, Chando Park, C. Ching, Seung H. Kang
المصدر: IEEE Transactions on Electron Devices. 64:3639-3646
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Engineering, Magnetoresistance, Dielectric strength, business.industry, Electrical engineering, Time-dependent gate oxide breakdown, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Duty cycle, 0103 physical sciences, Electronic engineering, Breakdown voltage, Torque, Electrical and Electronic Engineering, 0210 nano-technology, business, Voltage
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المؤلفون: C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen
المصدر: IEEE Transactions on Magnetics. 53:1-4
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Temperature sensitivity, Magnetoresistance, Condensed matter physics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Tunnel magnetoresistance, 0103 physical sciences, Perpendicular, Electrical and Electronic Engineering, 0210 nano-technology, Device parameters, Quantum tunnelling