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1مؤتمر
المؤلفون: Radens, C.J., Kudelka, S., Nesbit, L., Malik, R., Dyer, T., Dubuc, C., Joseph, T., Seitz, M., Clevenger, L., Arnold, N., Mandelman, J., Divakaruni, R., Casarotto, D., Lea, D., Jaiprakash, V.C., Sim, J., Faltermeier, J., Low, K., Strane, J., Halle, S., Ye, Q., Bukofsky, S., Gruening, U., Schloesser, T., Bronner, G.
المصدر: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :349-352 2000
Relation: International Electron Devices Meeting. Technical Digest. IEDM
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2مؤتمر
المؤلفون: Crowder, S., Stiffler, S., Parries, P., Bronner, G., Nesbit, L., Wille, W., Powell, M., Ray, A., Chen, B., Davari, B.
المصدر: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :45-48 1997
Relation: International Electron Devices Meeting. IEDM Technical Digest
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3مؤتمر
المؤلفون: Nesbit, L., Alsmeier, J., Chen, B., DeBrosse, J., Faheyk, P., Gall, M., Gambino, J., Gernhard, S., Ishiuchi, H., Kleinhenz, R., Mandelman, J., Mii, T., Morikado, M., Nitayama, A., Parke, S., Wong, H., Bronner, G.
المصدر: Proceedings of IEEE International Electron Devices Meeting Electron devices Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International. :627-630 1993
Relation: Proceedings of IEEE International Electron Devices Meeting
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4مؤتمر
المؤلفون: Radens, C.J., Gruening, U., Mandelman, J.A., Seitz, M., Lea, D., Casarotto, D., Clevenger, L., Nesbit, L., Malik, R., Halle, S., Kudelka, S., Tews, H., Divakaruni, R., Sim, J., Strong, A., Tibbel, D., Arnold, N., Bukofsky, S., Preuninger, J., Kunkel, G., Bronner, G.
المصدر: 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) VLSI technology VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on. :80-81 2000
Relation: 2000 Symposium on VLSI Technology. Digest of Technical Papers
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5مؤتمر
المؤلفون: Bronner, G., Aochi, H., Gall, M., Gambino, J., Gernhardt, S., Hammerl, E., Ho, H., Iba, J., Ishiuchi, H., Jaso, M., Kleinhenz, R., Mii, T., Narita, M., Nesbit, L., Neumueller, W., Nitayama, A., Ohiwa, T., Parke, S., Ryan, J., Sato, T., Takato, H., Yoshikawa, S.
المصدر: 1995 Symposium on VLSI Technology. Digest of Technical Papers VLSI technology VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on. :15-16 1995
Relation: 1995 Symposium on VLSI Technology. Digest of Technical Papers
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6مؤتمر
المؤلفون: Weis, R., Hummler, K., Akatsu, H., Kudelka, S., Dyer, T., Seitz, M., Scholz, A., Kim, B., Wise, M., Malik, R., Strane, J., Goebel, Th., McStay, K., Beintner, J., Arnold, N., Gerber, R., Liegl, B., Knorr, A., Economikos, L., Simpson, A., Yan, W., Dobuzinsky, D., Mandelman, J., Nesbit, L., Radens, C.J., Divakaruni, R., Bergner, W., Bronner, G., Mueller, W.
المصدر: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Electron devices meeting 2001 Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International. :18.7.1-18.7.4 2001
Relation: International Electron Devices Meeting. Technical Digest
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7دورية أكاديمية
المؤلفون: Koburger, C., White, F.R., Nesbit, L., Emmanuel, S.D.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 33(6):766-771 Jun, 1986
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8دورية أكاديمية
المؤلفون: Koburger, C., White, F., Nesbit, L., Emmanuel, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 32(11):2531-2531 Nov, 1985
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9مؤتمر
المؤلفون: Radens, C.J., Kudelka, S., Nesbit, L., Malik, R., Dyer, T., Dubuc, C., Joseph, T., Seitz, M., Clevenger, L., Arnold, N., Mandelman, J., Divakaruni, R., Casarotto, D., Lea, D., Jaiprakash, V.C., Sim, J., Faltermeier, J., Low, K., Strane, J., Halle, S.
المصدر: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p349-352, 4p
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10دورية أكاديمية
المؤلفون: Krusin-Elbaum, L., Ahn, K., Souk, J. H., Ting, C. Y., Nesbit, L. A.
المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1986, Vol. 4 Issue 6, p3106-3110, 5p