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المصدر: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 6(3):328-333 May, 2007

المؤلفون: Choi, Y. C., Pophristic, M., Cha, H.-Y., Peres, B., Spencer, M. G., Eastman, L. F.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(12):2926-2931 Dec, 2006

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المصدر: APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE. :1264-1267 Feb, 2007

Relation: APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition

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المؤلفون: Dmitriev, V. A.^{Aff3, Aff4}, Fekade, K.^Aff3, Spencer, M. G.^Aff3

المساهمون: Lotsch, H. K. V., editor, Yang, Cary Y., editor^Aff1, Rahman, M. Mahmudur, editor^Aff1, Harris, Gary L., editor^Aff2

المصدر: Amorphous and Crystalline Silicon Carbide IV : Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991. 71:352-355

المؤلفون: Tang, X.^Aff3, Irvine, K. G.^Aff3, Zhang, D.^Aff3, Spencer, M. G.^Aff3

المساهمون: Lotsch, H. K. V., editor, Yang, Cary Y., editor^Aff1, Rahman, M. Mahmudur, editor^Aff1, Harris, Gary L., editor^Aff2

المصدر: Amorphous and Crystalline Silicon Carbide IV : Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991. 71:206-209

المؤلفون: Fekade, K.^Aff3, Spencer, M. G.^Aff3, Nahm, S.^Aff4, Salamanca-Riba, L. G.^Aff4

المساهمون: Lotsch, H. K. V., editor, Yang, Cary Y., editor^Aff1, Rahman, M. Mahmudur, editor^Aff1, Harris, Gary L., editor^Aff2

المصدر: Amorphous and Crystalline Silicon Carbide IV : Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991. 71:183-189

المؤلفون: Cha, Ho-Young, Chen, X., Wu, H., Schaff, W. J., Spencer, M. G., Eastman, L. F.

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المصدر: Journal of Electronic Materials. April 2005 34(4):330-335

المؤلفون: Cha, Ho-Young, Choi, Y. C., Thompson, R. M., Kaper, V., Shealy, J. R., Eastman, L. F., Spencer, M. G.

المصدر: Journal of Electronic Materials. August 2004 33(8):908-911