Alternate Title: Influence of Ga-B Co-Doping on the Resistivity Uniformity of 6 inch Ge Single Crystal by VGF Method. (English)

المؤلفون: 张颖武, 边义午, 陈晨, 周春锋, 王云彪, 兰天平

المصدر: Semiconductor Technology; Aug2024, Vol. 49 Issue 8, p708-725, 18p