يعرض 1 - 10 نتائج من 54,500 نتيجة بحث عن '"16 nm"', وقت الاستعلام: 1.37s تنقيح النتائج
  1. 1
    مؤتمر
    Analog Two-Variable Spiking Neuron in 16 nm FinFET for Neuromorphic Systems

    المؤلفون: Stevenazzi, Lorenzo, Baschirotto, Andrea, De Matteis, Marcello

    المصدر: 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Ph.D Research in Microelectronics and Electronics (PRIME), 2024 19th Conference on. :1-4 Jun, 2024

    Relation: 2024 19th Conference on PhD Research in Microelectronics and Electronics (PRIME)

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  2. 2
    مؤتمر
    Implementation of NMOS-based LDO Using Recycling Folded-Cascode in 16 nm FinFET

    المؤلفون: Maximo, Miguel, Santos, Mauro, Oliveira, Joao, Toledo, Pedro, Machado, Ricardo, Oliveira, Luis

    المصدر: 2024 8th International Young Engineers Forum on Electrical and Computer Engineering (YEF-ECE) Electrical and Computer Engineering (YEF-ECE), 2024 8th International Young Engineers Forum on. :107-110 Jul, 2024

    Relation: 2024 8th International Young Engineers Forum on Electrical and Computer Engineering (YEF-ECE)

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  3. 3
    دورية أكاديمية
    Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data

    المؤلفون: Fongral, M., Pouget, V., Saigne, F., Ruffenach, M., Carron, J., Malou, F., Mekki, J.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1645-1653 Aug, 2024

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  4. 4
    دورية أكاديمية
    Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine

    المؤلفون: Prasad, A.S., Scherer, M., Conti, F., Rossi, D., Di Mauro, A., Eggimann, M., Gomez, J.T., Li, Z., Sarwar, S.S., Wang, Z., De Salvo, B., Benini, L.

    المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 59(7):2055-2069 Jul, 2024

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  5. 5
    مؤتمر
    An Investigative Study on Performance and Reliability Effects on S2C/TSPC/SCD D-Flip-Flops using 16 nm CMOS Process

    المؤلفون: Karthikeya, Kondapaka, Teja, Nagavelly Tarun, Ajayan, J., S, Sreejith, Manikandan, M., Rebelli, Shashank

    المصدر: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI), 2024 IEEE International Conference on. 2:1-6 Mar, 2024

    Relation: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

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  6. 6
    دورية أكاديمية
    Investigation of the Impact of Angles and Rotation of Low-Energy Protons in SRAM Cells Down to 16 nm

    المؤلفون: Artola, L., Glorieux, M., Hubert, G., Inguimbert, C., Bonnoit, T., Rey, R., Lange, T., Levacq, D., Poivey, C.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):542-547 Apr, 2024

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  7. 7
    دورية أكاديمية
    Open Se Cura: First silicon results of an auditable and transparent hardware root-of-trust system using open electronic design automation in 16 nm

    المؤلفون: Tao, G., Chen, M., Kielian, G., Pan, B., Yick, K., Sylvester, D., Saligane, M.

    المصدر: IEEE Solid-State Circuits Magazine IEEE Solid-State Circuits Mag. Solid-State Circuits Magazine, IEEE. 16(2):58-66 Jan, 2024

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  8. 8
    دورية أكاديمية
    On-Chip Fully Reconfigurable Artificial Neural Network in 16 nm FinFET for Positron Emission Tomography

    المؤلفون: Muntean, A., Shoshan, Y., Yuzhaninov, S., Ripiccini, E., Bruschini, C., Fish, A., Charbon, E.

    المصدر: IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 30(1: Single-Photon Technologies and Applications):1-13 Jan, 2024

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  9. 9
    دورية أكاديمية
    Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

    المؤلفون: Lu, Yu-Cheng, Huang, Jing-Kai, Chao, Kai-Yuan, Li, Lain-JongAff4, IDs41565024016933_cor4, Hu, Vita Pi-HoAff1, IDs41565024016933_cor5

    المصدر: Nature Nanotechnology. 19(7):1066-1072

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  10. 10
    دورية أكاديمية
    Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin

    المؤلفون: Wei, X., Cui, J., Luo, D., Yu, G., Li, Y., Guo, Q., Zheng, Q.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(12):1931-1934 Dec, 2023

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