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1دورية أكاديمية
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2دورية أكاديمية
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3دورية أكاديمية
المؤلفون: Brixhilda Domi, Kapil Bhorkar, Carlos Rumbo, Labrini Sygellou, Spyros N. Yannopoulos, Rocio Barros, Roberto Quesada, Juan Antonio Tamayo-Ramos
المصدر: International Journal of Molecular Sciences, Vol 22, Iss 2, p 567 (2021)
مصطلحات موضوعية: 2D boron nitride, eukaryotic model, nanotoxicity, cell viability, oxidative stress, Biology (General), QH301-705.5, Chemistry, QD1-999
وصف الملف: electronic resource
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4دورية أكاديمية
المصدر: Nanomaterials, Vol 10, Iss 8, p 1433 (2020)
مصطلحات موضوعية: 2D boron nitride/tungsten nitride (BN–WN) nanocomposite, tunable bandgap, photodetector, fast response, Chemistry, QD1-999
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Reyes, Laura, Loganathan, Archana, Boesl, Benjamin, Agarwal, Arvind
المصدر: Tribology Letters. December 2016 64(3):1-8
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المؤلفون: Tarik Moudakir, Suresh Sundaram, Paul L. Voss, Simon Gautier, Phuong Vuong, Stefano Leone, Fouad Benkhelifa, Jean-Paul Salvestrini, Adama Mballo, Abdallah Ougazzaden, Gilles Patriarche, Soufiane Karrakchou
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), ANR Labex Ganex, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
المصدر: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (49), pp.55460-55466. ⟨10.1021/acsami.0c16850⟩مصطلحات موضوعية: Materials science, mechanical transfer, Diffusion, semiconductors, 02 engineering and technology, High-electron-mobility transistor, 010402 general chemistry, 01 natural sciences, flexible (opto) electronics, transferrable nanodevices, [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], General Materials Science, 2D boron nitride, business.industry, Delamination, Heterojunction, Adhesion, III-nitrides, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0104 chemical sciences, Semiconductor, Sapphire, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
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المؤلفون: Domi, Brixhilda
المساهمون: Quesada Pato, Roberto, Tamayo Ramos, Juan Antonio, Universidad de Burgos. ICCRAM
المصدر: Repositorio Institucional de la Universidad de Burgos (RIUBU)
instnameمصطلحات موضوعية: 2302.21 Biología Molecular, nanotoxicidad, 2407.01 Cultivo Celular, 2D boron nitride, TMD, Chemistry, Organic, Química orgánica, 2210.28 Química del Estado Sólido, nitruro de boro 2D, nanoparticulas, nanotoxicity, Grafeno, transition metal disulfide, nanoparticles, Graphene, 2303.27 Compuestos de Azufre
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dbf940eb00426690ab780bb2635b9cf3
http://hdl.handle.net/10259/5700 -
8دورية أكاديمية
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المؤلفون: Vuong, Phuong, Sundaram, Suresh, Mballo, Adama, Patriarche, Gilles, Leone, Stefano, Benkhelifa, Fouad, Karrakchou, Soufiane, Moudakir, Tarik, Gautier, Simon, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, A.
المساهمون: Publica
مصطلحات موضوعية: 2D boron nitride, mechanical transfer, flexible (opto) electronics, transferrable nanodevices, semiconductors, III-nitrides
URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______610::7198207b0ea1e3f09354597211c68d73
https://publica.fraunhofer.de/handle/publica/266162 -
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المؤلفون: Yacine Halfaya, Taha Ayari, Simon Gautier, Abdallah Ougazzaden, Jean-Paul Salvestrini, Xin Li, Suresh Sundaram, Chris Bishop, Paul L. Voss, Gilles Patriarche, Saiful Alam
المساهمون: Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton
المصدر: Advanced Materials Interfaces
Advanced Materials Interfaces, Wiley, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩مصطلحات موضوعية: Materials science, Nanowire, 02 engineering and technology, semiconductors, Nitride, 010402 general chemistry, Epitaxy, 01 natural sciences, flexible electronics, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], chemistry.chemical_compound, symbols.namesake, law, core/shell nanostructures, 2D boron nitride, business.industry, van der Waals epitaxy, Mechanical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, Mechanics of Materials, Boron nitride, symbols, Optoelectronics, Nanorod, van der Waals force, 0210 nano-technology, business, nanorods, Light-emitting diode
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