يعرض 1 - 10 نتائج من 160 نتيجة بحث عن '"6T‐SRAM"', وقت الاستعلام: 0.99s تنقيح النتائج
  1. 1
    مؤتمر
    Compact 6T-SRAM Using Bottom-Gate Transistor in FD-SOI Process for Monolithic-3D Integration

    المؤلفون: Vemuri, Madhava Sarma, Ahmed, Tanvir, Tida, Umamaheswara Rao

    المصدر: 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) ISVLSI VLSI (ISVLSI), 2024 IEEE Computer Society Annual Symposium on. :725-729 Jul, 2024

    Relation: 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)

    Full Text Finder
    أضف إلى المفضلة
  2. 2
    دورية أكاديمية
    Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond

    المؤلفون: Zhang, X., Yao, J., Luo, Y., Cao, L., Zheng, Y., Zhang, Q., Wu, Z., Yin, H.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1776-1783 Mar, 2024

    Full Text Finder
    أضف إلى المفضلة
  3. 3
    مؤتمر
    A 2Mbit Digital in-Memory Computing Matrix-Vector Multiplier for DNN Inference supporting flexible bit precision and matrix size achieving 612 binary TOPS/W

    المؤلفون: Gupta, Mohit, Cosemans, Stefan, Debacker, Peter, Dehaene, Wim

    المصدر: ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC) Solid State Circuits Conference (ESSCIRC), ESSCIRC 2023- IEEE 49th European. :417-420 Sep, 2023

    Relation: ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    مؤتمر
    Single Event Upset and Radiation Hardening of the Complementary FET (CFET) based 6T-SRAM

    المؤلفون: Zhang, Zhengxin, Chen, Wangyong, Lin, Jianwen, Cai, Linlin

    المصدر: 2024 2nd International Symposium of Electronics Design Automation (ISEDA) Electronics Design Automation (ISEDA), 2024 2nd International Symposium of. :782-782 May, 2024

    Relation: 2024 2nd International Symposium of Electronics Design Automation (ISEDA)

    أضف إلى المفضلة
  5. 5
    مؤتمر
    FinFET 6T-SRAM Compute-in-Memory Targeting Low Power Neural Networks Operations

    المؤلفون: Gul, Waqas, Shams, Maitham, Al-Khalili, Dhamin

    المصدر: 2023 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2023 IEEE International Symposium on. :1-4 May, 2023

    Relation: 2023 IEEE International Symposium on Circuits and Systems (ISCAS)

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    مؤتمر
    Impact of interconnects enhancement on SRAM design beyond 5nm technology node

    المؤلفون: Gupta, Mohit Kumar, Weckx, Pieter, Komalan, Manu Perumkunnil, Ryckaert, Julien

    المصدر: 2023 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2023 IEEE International Symposium on. :1-5 May, 2023

    Relation: 2023 IEEE International Symposium on Circuits and Systems (ISCAS)

    Full Text Finder
    أضف إلى المفضلة
  7. 7
    دورية أكاديمية
    Layout Optimization of Complementary FET 6T-SRAM Cell Based on a Universal Methodology Using Sensitivity With Respect to Parasitic - and -Values

    المؤلفون: Luo, Y., Cao, L., Zhang, Q., Cao, Y., Zhang, Z., Yao, J., Yan, G., Zhang, X., Gan, W., Huo, J., Xu, H., Tian, G., Bu, W., Wu, Y., Wu, Z., Yin, H.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(11):6095-6101 Nov, 2022

    Full Text Finder
    أضف إلى المفضلة
  8. 8
    مؤتمر
    Influence of Parasitic Capacitance and Resistance on Performance of 6T-SRAM for Advanced CMOS Circuits Design

    المؤلفون: Luo, Yanna, Yan, Gangping, Cao, Lei, Huo, Jiali, Zhang, Xuexiang, Wei, Yanzhao, Tian, Guoliang, Zhang, Qingzhu, Wu, Zhenhua, Yin, Huaxiang

    المصدر: 2022 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2022 China. :1-3 Jun, 2022

    Relation: 2022 China Semiconductor Technology International Conference (CSTIC)

    أضف إلى المفضلة
  9. 9
    مؤتمر
    Bridge-Defect Prediction in SRAM Circuits Using Random Forest, XGBoost, and LightGBM Learners

    المؤلفون: Ghosh, Joydeep, Lim, Shang Yi, Thean, Aaron Voon-Yew

    المصدر: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :259-262 Sep, 2021

    Relation: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

    Full Text Finder
    أضف إلى المفضلة
  10. 10
    مؤتمر
    A Simulation Approach to Analyze Bridge-Defects in a 6T-SRAM Bit Cell

    المؤلفون: Ghosh, Joydeep, Lim, Shang Yi, Meftahul, Ferdaus Md., Jayavelu, Senthilnath, Thean, Aaron Voon-Yew

    المصدر: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :235-237 Mar, 2022

    Relation: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء