-
1
المؤلفون: A.T. Putra, M. Widiyanti, M. Saggaff, Z. Wahab
المصدر: Russian Journal of Agricultural and Socio-Economic Sciences, Vol 104, Iss 8, Pp 182-188 (2020)
مصطلحات موضوعية: Service quality, customer satisfaction, Word of mouth, Customer satisfaction, Advertising, General Medicine, Business, word of mouth, lcsh:Agriculture (General), palembang, service quality, lcsh:S1-972
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::416449f732fc42e60247a2e51c313d2e
https://doi.org/10.18551/rjoas.2020-08.20 -
2
المؤلفون: Toshiro Hiramoto, Masumi Saitoh, A.T. Putra, Gen Tsutsui
المصدر: Japanese Journal of Applied Physics. 45:6173-6176
مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, General Engineering, General Physics and Astronomy, Short-channel effect, Drain-induced barrier lowering, Nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Capacitance, CMOS, MOSFET, Field-effect transistor, Voltage, Electronic circuit
-
3
المؤلفون: Ken Takeuchi, T. Tsunomura, S. Kamohara, Toshiro Hiramoto, A.T. Putra, Akio Nishida
المصدر: 2008 International Conference on Simulation of Semiconductor Processes and Devices.
مصطلحات موضوعية: Materials science, Silicon, Condensed matter physics, business.industry, Electrical engineering, chemistry.chemical_element, Charge (physics), Threshold voltage, chemistry, Fixed charge, MOSFET, business, Randomness, NMOS logic, Random dopant fluctuation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::50b79cc69dcb81d0c567640b7a05484e
https://doi.org/10.1109/sispad.2008.4648228 -
4
المؤلفون: Takaaki Tsunomura, Akio Nishida, Ken Takeuchi, A.T. Putra, Shiro Kamohara, Toshiro Hiramoto
المصدر: 2008 IEEE Silicon Nanoelectronics Workshop.
مصطلحات موضوعية: Materials science, Condensed matter physics, business.industry, Electrical engineering, Oxide, Surface finish, Grain size, Threshold voltage, chemistry.chemical_compound, chemistry, Logic gate, Electrode, MOSFET, Grain boundary, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::44071dfd3448d09c03b189e61f3604b1
https://doi.org/10.1109/snw.2008.5418448 -
5
المؤلفون: Takaaki Tsunomura, Akio Nishida, Shiro Kamohara, Fumiko Yano, A.T. Putra, Tohru Mogami, Toshiro Hiramoto, S. Inaba, Kiyoshi Takeuchi, Kazuo Terada
المصدر: 2008 Symposium on VLSI Technology.
مصطلحات موضوعية: Physics, Condensed matter physics, Doping, MOSFET, Electronic engineering, Mosfet circuits, Cluster analysis, Plot (graphics), Random dopant fluctuation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7336f2d50b3a8a980d3ce7aaaeb6fde6
https://doi.org/10.1109/vlsit.2008.4588600 -
6
المؤلفون: Toshiro Hiramoto, K. Shimizu, K. Takahashi, A.T. Putra
المصدر: 2007 International Semiconductor Device Research Symposium.
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, business.industry, MOSFET, Hardware_INTEGRATEDCIRCUITS, Electrical engineering, Silicon on insulator, Low leakage, Hardware_PERFORMANCEANDRELIABILITY, Device simulation, business, Engineering physics, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::828d68274dcc2e3ad297acf5cac6ae91
https://doi.org/10.1109/isdrs.2007.4422283 -
7
المؤلفون: Shiro Kamohara, Akio Nishida, A.T. Putra, Toshiro Hiramoto, Takaaki Tsunomura
المصدر: 2007 International Semiconductor Device Research Symposium.
مصطلحات موضوعية: Materials science, Nanoelectronics, business.industry, MOSFET, Electrical engineering, Optoelectronics, Time-dependent gate oxide breakdown, Device simulation, business, Nanoscopic scale
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0731abbe5428bff90ddc17054d130deb
https://doi.org/10.1109/isdrs.2007.4422270 -
8
المؤلفون: Takaaki Tsunomura, Shiro Kamohara, T. Fukai, Toshiro Hiramoto, Akio Nishida, A.T. Putra, Kiyoshi Takeuchi
المصدر: 2007 IEEE International Electron Devices Meeting.
مصطلحات موضوعية: Normalization (statistics), Engineering, Dopant, business.industry, MOSFET, Electronic engineering, business, Threshold voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6224bda71ec46413f798c88e64b855cd
https://doi.org/10.1109/iedm.2007.4418975 -
9
المؤلفون: Toshiro Hiramoto, K. Shimizu, Chi Ho Lee, A.T. Putra
المصدر: Japanese Journal of Applied Physics. 49:04DC01
مصطلحات موضوعية: Materials science, Dopant, business.industry, Reverse short-channel effect, Doping, Transistor, General Engineering, General Physics and Astronomy, Silicon on insulator, law.invention, Threshold voltage, law, Optoelectronics, Field-effect transistor, business, Communication channel
-
10
المؤلفون: Takaaki Tsunomura, A.T. Putra, Shiro Kamohara, Akio Nishida, Kiyoshi Takeuchi, Toshiro Hiramoto
المصدر: Japanese Journal of Applied Physics. 48:064504
مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, General Engineering, Oxide, General Physics and Astronomy, engineering.material, law.invention, Threshold voltage, Metal, chemistry.chemical_compound, Polycrystalline silicon, Oxide semiconductor, chemistry, Transmission electron microscopy, law, visual_art, visual_art.visual_art_medium, engineering, Optoelectronics, Field-effect transistor, business