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المؤلفون: G. Augustine, J.D. Oliver, P.M. Esker, R.C. Brooks, R.R. Barron, H. G. Henry, Rowland C. Clarke, A.W. Morse, B.W. Veasel, G. C. DeSalvo
المصدر: IEEE Transactions on Electron Devices. 51:839-845
مصطلحات موضوعية: Power gain, Power-added efficiency, Materials science, business.industry, Transconductance, Wide-bandgap semiconductor, Electronic, Optical and Magnetic Materials, Optoelectronics, Continuous wave, MESFET, S band, Electrical and Electronic Engineering, business, Surface states
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المؤلفون: W. J. Malkowski, B.A. Morick, J. R. Gigante, K.J. Petrosky, A.W. Morse, R.R. Barron, G. C. DeSalvo, Rowland C. Clarke, W.R. Curtice, T.J. Knight, J.A. Ostop
المصدر: 60th DRC. Conference Digest Device Research Conference.
مصطلحات موضوعية: Power gain, Materials science, business.industry, Electrical engineering, Wide-bandgap semiconductor, Schottky diode, Carbide, Power (physics), chemistry.chemical_compound, Ion implantation, chemistry, Silicon carbide, Optoelectronics, business, Static induction transistor
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4f9d1c9cce6e737928ea8f14c6cc552b
https://doi.org/10.1109/drc.2002.1029586 -
3
المؤلفون: A.K. Agarwal, G. Augustine, V. Balakrishna, C.D. Brandt, A.A. Burk, null Li-Shu Chen, R.C. Clarke, P.M. Esker, H.M. Hobgood, R.H. Hopkins, A.W. Morse, L.B. Rowland, S. Seshadri, R.R. Siergiej, T.J. Smith, S. Sriram
المصدر: International Electron Devices Meeting. Technical Digest.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::86952549f18d334d82e879543045de20
https://doi.org/10.1109/iedm.1996.553573 -
4
المؤلفون: Anant K. Agarwal, C.D. Brandt, Rowland C. Clarke, R.R. Siergiej, P.M. Esker, A.W. Morse
المصدر: 1996 IEEE MTT-S International Microwave Symposium Digest.
مصطلحات موضوعية: Materials science, Silicon, business.industry, Hybrid silicon laser, Transistor, Wide-bandgap semiconductor, chemistry.chemical_element, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, law.invention, chemistry.chemical_compound, Semiconductor, chemistry, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Silicon carbide, Optoelectronics, Silicon bandgap temperature sensor, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a54b3121bd4568546dd9e21e33699812
https://doi.org/10.1109/mwsym.1996.511030 -
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المؤلفون: P.M. Esker, G.W. Eldridge, J.A. Ostop, C.D. Brandt, Rowland C. Clarke, A.W. Morse, B. Barron, Richard Bojko, R.R. Siergiej, L.-S. Chen
المصدر: 56th Annual Device Research Conference Digest (Cat. No.98TH8373).
مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Transistor, Wide-bandgap semiconductor, Field strength, law.invention, Electricity generation, Thermal conductivity, law, Optoelectronics, business, Microwave, Power density
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::04c2ba9e47456b5351dd82cc263a5619
https://doi.org/10.1109/drc.1998.731137 -
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المؤلفون: A.A. Burk, L.-S. Chen, Rowland C. Clarke, S. Sriram, V. Balakrishna, A.W. Morse, R.R. Siergiej, C.D. Brandt, A.K. Agarwal
المصدر: 1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132).
مصطلحات موضوعية: Materials science, Silicon, business.industry, Doping, Transistor, Wide-bandgap semiconductor, chemistry.chemical_element, Epitaxy, law.invention, chemistry.chemical_compound, Semiconductor, chemistry, law, Silicon carbide, Optoelectronics, Wafer, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::16759941a41af582864d7f086d0cc95c
https://doi.org/10.1109/htemds.1998.730637 -
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المؤلفون: C.D. Brandt, J.J. Hawkins, A.W. Morse, R.R. Barron, J.A. Ostop, T.J. Smith, S. Sriram, P.M. Esker, Rowland C. Clarke, R.R. Siergiej, C.D. Davis, L.-S. Chen
المصدر: 1997 IEEE MTT-S International Microwave Symposium Digest.
مصطلحات موضوعية: Materials science, Silicon, business.industry, Hybrid silicon laser, Wide-bandgap semiconductor, Silicon on insulator, chemistry.chemical_element, chemistry.chemical_compound, chemistry, Silicon carbide, Optoelectronics, MESFET, Power semiconductor device, Silicon bandgap temperature sensor, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8004aff2e52bddf7d6fe37c025e1c0f3
https://doi.org/10.1109/mwsym.1997.604519 -
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المؤلفون: P.M. Esker, R.R. Siergiej, A.W. Morse, Richard Bojko, T.J. Smith, Rowland C. Clarke, L.B. Rowland
المصدر: 1997 55th Annual Device Research Conference Digest.
مصطلحات موضوعية: High-gain antenna, Materials science, Semiconductor, law, business.industry, Semiconductor technology, Semiconductor materials, Transistor, Optoelectronics, business, Signal gain, law.invention, Static induction transistor
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::20841c3d89df6f70d51d31d88200892f
https://doi.org/10.1109/drc.1997.612502 -
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المؤلفون: R.R. Barron, R.H. Hopkins, G. Augustine, A.A. Burk, S. Sriram, M.C. Driver, R.C. Glass, C.D. Brandt, T.J. Smith, Rowland C. Clarke, R.R. Siergiej, H.M. Hobgood, P.A. Orphanos, A.W. Morse
المصدر: 1995 53rd Annual Device Research Conference Digest.
مصطلحات موضوعية: Power-added efficiency, Materials science, business.industry, RF power amplifier, Electrical engineering, Wide-bandgap semiconductor, Saturation velocity, chemistry.chemical_compound, chemistry, Silicon carbide, Optoelectronics, MESFET, business, Ohmic contact, Power density
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ad8642bd574048a37d0dcf82b359b913
https://doi.org/10.1109/drc.1995.496290 -
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المؤلفون: R.R. Siergiej, A.W. Morse, Rowland C. Clarke, A.K. Aganval, A.A. Burk, C.D. Brandt, P.A. Orphanos
المصدر: Proceedings of International Electron Devices Meeting.
مصطلحات موضوعية: Power-added efficiency, Materials science, business.industry, Transistor, Wide-bandgap semiconductor, Electrical engineering, Schottky diode, Pulsed power, law.invention, Semiconductor, law, Optoelectronics, Reactive-ion etching, business, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ff374100729d064731578741c10e4867
https://doi.org/10.1109/iedm.1995.499213