يعرض 1 - 10 نتائج من 605 نتيجة بحث عن '"AGD"', وقت الاستعلام: 1.60s تنقيح النتائج
  1. 1
    مؤتمر
    Current Balancing of Parallel High Current SiC Half Bridge Modules using Delay Based Active Gate Driving with Inter-Device Inductances

    المؤلفون: Parker, Mason, Neira, Sebastian, Waite, Philip, Horsley, Edward L., Finney, Stephen, Judge, Paul D.

    المصدر: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2024 IEEE. :1073-1080 Feb, 2024

    Relation: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC)

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  2. 2
    دورية أكاديمية
    On the Damping of Ringing Affecting Power Transistors by Means of Active Gate Drivers

    المؤلفون: Raviola, E., Fiori, F.

    المصدر: IEEE Transactions on Circuits and Systems I: Regular Papers IEEE Trans. Circuits Syst. I Circuits and Systems I: Regular Papers, IEEE Transactions on. 71(4):1920-1932 Apr, 2024

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  3. 3
    مؤتمر
    2-Level Miller Detection-Based High Side Gate Driver Design for Power MOSFETs

    المؤلفون: Jose, Oliver Lexter July A., Kolakaluri, Venkata Naveen, Kuo, Jui-Min, Chou, Mitch Ming-Chi, Wang, Chua-Chin

    المصدر: 2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) APCCAS Circuits and Systems (APCCAS), 2023 IEEE Asia Pacific Conference on. :266-270 Nov, 2023

    Relation: 2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

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  4. 4
    مؤتمر
    An Adaptive Current Source IGBT Gate Driver Based on Current and Voltage Slope Feedback to Reduce EMI

    المؤلفون: Liu, Chang, Zhang, Desheng, Yang, Shuohan, Wang, Yinyu, Zhou, Qingyue, Zhang, Shuo, Min, Run, Tong, Qiaoling

    المصدر: 2023 IEEE 15th International Conference on ASIC (ASICON) ASIC (ASICON), 2023 IEEE 15th International Conference on. :1-4 Oct, 2023

    Relation: 2023 IEEE 15th International Conference on ASIC (ASICON)

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  5. 5
    مؤتمر
    SiC MOSFET High Side Gate Driver Design Using HV CMOS Process

    المؤلفون: Jose, Oliver Lexter July A., Kuo, Jui-Min, Kolakaluri, Venkata Naveen, Wang, Chua-Chin

    المصدر: 2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS) Circuits and Systems (MWSCAS), 2023 IEEE 66th International Midwest Symposium on. :45-49 Aug, 2023

    Relation: 2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS)

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  6. 6
    مؤتمر
    An Active Gate Driver for SiC to Meet Requirements in EMI and Switching Loss by Slew Rate Control

    المؤلفون: Sun, Xizhi, Zhi, Shuangqing, Hao, Yuanchao, Ma, Mingcheng, Xu, Dianguo

    المصدر: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia) Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), 2023 11th International Conference on. :2004-2009 May, 2023

    Relation: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)

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  7. 7
    دورية أكاديمية
    Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

    المؤلفون: He, Y., Wang, X., Shao, S., Zhang, J.

    المصدر: IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 38(5):6116-6127 May, 2023

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  8. 8
    مؤتمر
    WBG based Integrated Drive System for Electric Vehicle

    المؤلفون: K, Girish, P, Ganesan

    المصدر: 2022 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) Power Electronics, Drives and Energy Systems (PEDES), 2022 IEEE International Conference on. :1-5 Dec, 2022

    Relation: 2022 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)

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  9. 9
    دورية أكاديمية
    An Adaptive Method to Reduce Undershoots and Overshoots in Power Switching Transistors Through a Low-Complexity Active Gate Driver

    المؤلفون: Raviola, E., Fiori, F.

    المصدر: IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 38(3):3235-3245 Mar, 2023

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  10. 10
    دورية أكاديمية
    Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

    المؤلفون: Parker, M., Sahin, I., Mathieson, R., Finney, S., Judge, P.D.

    المصدر: IEEE Open Journal of Power Electronics IEEE Open J. Power Electron. Power Electronics, IEEE Open Journal of. 4:161-175 2023

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