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تسجيل الدخول للوصول الكامل.

المؤلفون: Lu, X., Hao, R., Diaz, M., Opila, R. L., Barnett, A.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 1(5):111-116 May, 2013

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.

المؤلفون: Xuesong Lu, Ruiying Hao, Martin Diaz, Robert L. Opila, Allen Barnett

المصدر: IEEE Journal of the Electron Devices Society, Vol 1, Iss 5, Pp 111-116 (2013)

مصطلحات موضوعية: AlGaP, GaP, LPE, surface passivation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/6544556/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/d131105933dc45f1af7ff29f7008ff42

المؤلفون: Hong, J., Lambers, E. S., Abernathy, C. R., Pearton, S. J., Shul, R. J., Hobson, W. S.

المصدر: Journal of Electronic Materials. March 1998 27(3):132-137

المؤلفون: Hong, J., Lee, J. W., Abernathy, C. R., Pearton, S. J., Constantine, C., Hobson, W. S., Ren, F.

المصدر: Journal of Electronic Materials. November 1997 26(11):1303-1309

وصف الملف: Medium: ED

URL الوصول: http://www.osti.gov/scitech/servlets/purl/869954

المؤلفون: Allen Barnett, Martin Diaz, Ruiying Hao, Robert L. Opila, Xuesong Lu

المصدر: IEEE Journal of the Electron Devices Society, Vol 1, Iss 5, Pp 111-116 (2013)

مصطلحات موضوعية: Diffraction, Materials science, Passivation, integumentary system, business.industry, Wide-bandgap semiconductor, GaP, Epitaxy, Electronic, Optical and Magnetic Materials, law.invention, Multiple exciton generation, law, Solar cell, biological sciences, AlGaP, Optoelectronics, Quantum efficiency, lcsh:Electrical engineering. Electronics. Nuclear engineering, Electrical and Electronic Engineering, business, LPE, Layer (electronics), surface passivation, lcsh:TK1-9971, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05ff81d7266a1b7b8c29f8588fe9c4ea
https://ieeexplore.ieee.org/document/6544556/

المؤلفون: Dadgostar, Shabnam

المساهمون: Masselink, W. T., Riechert, H., Hannappel, T.

مصطلحات موضوعية: GaAs, GaP, AlGP, 530 Physik, III-V semiconductor, UQ 2200, growth temperature, Lumineszenz, 29 Physik, Astronomie, Gitterfehlanpassung, PH3 Fluss, lattice mismatch, Quantenpunkte, Wachstumstemperatur, AlGaAs, AlGaP, UP 3150, ddc:530, III-V Halbleiter, quantum structures, luminescence, PH3 flux

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aa2fe780998474d7c8b99fa842766a1
http://edoc.hu-berlin.de/18452/18228

المؤلفون: Berg, Alexander, Heurlin, Magnus, Tsopanidis, Stylianos, Pistol, Mats Erik, Borgström, Magnus T.

المصدر: Nanotechnology NanoLund: Centre for Nanoscience. 28(3)

مصطلحات موضوعية: AlGaP, MOVPE, nanowire, Raman spectroscopy, wurtzite, Teknik, Nanoteknik, Engineering and Technology, Nano Technology, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

URL الوصول: https://lup.lub.lu.se/record/6a6ee3bb-bb5d-48d5-b096-b5aa9e0072b5
http://dx.doi.org/10.1088/1361-6528/28/3/035706