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1دورية أكاديمية
المؤلفون: Stanislav Tyaginov, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, Adrian Chasin, Ben Kaczer
المصدر: Micromachines, Vol 14, Iss 11, p 2018 (2023)
مصطلحات موضوعية: hot-carrier degradation, compact physics model, secondary carriers, impact ionization, interface traps, carrier transport, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Alexander Makarov, Philippe Roussel, Erik Bury, Michiel Vandemaele, Alessio Spessot, Dimitri Linten, Ben Kaczer, Stanislav Tyaginov
المصدر: Micromachines, Vol 11, Iss 7, p 657 (2020)
مصطلحات موضوعية: hot-carrier degradation, random dopants, variability, physical modeling, FinFETs, carrier transport, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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3
المؤلفون: Ji-Yung Lin, Pieter Weckx, Subrat Mishra, Alessio Spessot, Francky Catthoor
المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 30:1757-1769
مصطلحات موضوعية: Hardware and Architecture, Electrical and Electronic Engineering, Software
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4
المؤلفون: S. S. Teja Nibhanupudi, Divya Prasad, Shidhartha Das, Odysseas Zografos, Alex Robinson, Anshul Gupta, Alessio Spessot, Peter Debacker, Diederik Verkest, Julien Ryckaert, Geert Hellings, James Myers, Brian Cline, Jaydeep P. Kulkarni
المصدر: IEEE Transactions on Electron Devices. 69:4453-4459
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5
المؤلفون: Geoffrey Pourtois, Julien Ryckaert, Andriy Hikavyy, Alessio Spessot, Geert Eneman, Naoto Horiguchi, Philippe Matagne, Hiroaki Arimura, Roger Loo, An De Keersgieter, Paola Favia, Clement Porret, Anabela Veloso
المصدر: IEEE Transactions on Electron Devices. 68:5380-5385
مصطلحات موضوعية: Materials science, business.industry, Transistor, Nanowire, Substrate (electronics), Edge (geometry), Electronic, Optical and Magnetic Materials, law.invention, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, Stack (abstract data type), chemistry, law, Stress relaxation, Optoelectronics, Electrical and Electronic Engineering, business
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6
المؤلفون: Alessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Horiguchi Naoto
المصدر: 2022 IEEE International Memory Workshop (IMW).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::18b958acebeb56f79fba51fc84b61331
https://doi.org/10.1109/imw52921.2022.9779308 -
7
المؤلفون: Alessio Spessot, Eugenio Dentoni Litta, Anne Vandooren, Marc Schaekers, Hao Yu, Shairfe Muhammad Salahuddin, Julien Ryckaert, Romain Ritzenthaler, Myung-Hee Na, Jean-Luc Everaert, Anshul Gupta
المصدر: IEEE Transactions on Electron Devices. 67:4631-4635
مصطلحات موضوعية: 010302 applied physics, Interconnection, Random access memory, Computer science, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Electronic, Optical and Magnetic Materials, CMOS, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Wafer, Static random-access memory, Electrical and Electronic Engineering, Cost of ownership
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8
المؤلفون: M. H. Na, Doyoung Jang, Geert Hellings, F. M. Bufler, Alessio Spessot, Geert Eneman, Philippe Matagne
المصدر: IEEE Transactions on Electron Devices. 67:4701-4704
مصطلحات موضوعية: 010302 applied physics, Materials science, Access resistance, Silicon, business.industry, Doping, Monte Carlo method, chemistry.chemical_element, 01 natural sciences, Electronic, Optical and Magnetic Materials, Ion, Stress (mechanics), chemistry, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, Device simulation, business
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9
المؤلفون: Alessio Spessot, Mohamed Boubaaya, Pierre C. Fazan, Barry O'Sullivan, E. Dupuy, J. Franco, V. Machkaoutsan, A. Ferhat Hamida, Eugenio Dentoni Litta, Cheolgyu Kim, Djamila Bennaceur-Doumaz, Romain Ritzenthaler, D. Linten, Boualem Djezzar, Naoto Horiguchi
المصدر: IEEE Transactions on Device and Materials Reliability. 20:269-277
مصطلحات موضوعية: 010302 applied physics, Materials science, Fin, Negative-bias temperature instability, Condensed matter physics, Silicon, Transistor, chemistry.chemical_element, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Stress (mechanics), chemistry, law, Logic gate, Electric field, 0103 physical sciences, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Metal gate
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10
المؤلفون: E. Dentoni Litta, Yun-Hyuck Ji, Cheolgyu Kim, V. Machkaoutsan, Romain Ritzenthaler, D. Linten, Alessio Spessot, Barry O'Sullivan, Naoto Horiguchi, Eddy Simoen, P. Fazan
المصدر: IEEE Transactions on Device and Materials Reliability. 20:258-268
مصطلحات موضوعية: 010302 applied physics, Negative-bias temperature instability, Materials science, business.industry, Transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, CMOS, law, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business, Metal gate, AND gate, Leakage (electronics)