المؤلفون: Hafsa Bouhnane, Andrew Hathcock, Dongyuan He, Simon Gautier, Thi Quynh Phuong Vuong, Yacine Halfaya, Adama Mballo, Chris Bishop, Abdallah Ougazzaden, Nossikpendou Yves Sama, Jean Michel Matray, Jean-Paul Salvestrini, Soufiane Karrakchou, Ali Ahaitouf, Taha Ayari

المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut Lafayette, Institut Lafayette (Institut Lafayette), PSE-ENV/SEDRE/LETIS, Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès)

المصدر: 2019 IEEE SENSORS
2019 IEEE SENSORS, Oct 2019, MONTRÉAL, Canada. pp.8956762, 2019, 2019 IEEE SENSORS, ⟨10.1109/SENSORS43011.2019.8956762⟩
2019 IEEE SENSORS, Oct 2019, Montreal, France. IEEE, pp.1-4, 2019, ⟨10.1109/SENSORS43011.2019.8956762⟩

مصطلحات موضوعية: Materials science, Annealing (metallurgy), 010401 analytical chemistry, Analytical chemistry, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Scandium oxide, 021001 nanoscience & nanotechnology, 01 natural sciences, Reference electrode, Capacitance, 0104 chemical sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, Standard electrode potential, Thin film, 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb11f9e7f57f00d1bd47e1870f2869e0
https://hal.archives-ouvertes.fr/hal-02870737/document