يعرض 1 - 10 نتائج من 39 نتيجة بحث عن '"Antonio T. Lucero"', وقت الاستعلام: 0.92s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

    المؤلفون: Yong Chan Jung, Su Min Hwang, Dan N. Le, Aswin L. N. Kondusamy, Jaidah Mohan, Sang Woo Kim, Jin Hyun Kim, Antonio T. Lucero, Arul Ravichandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim

    المصدر: Materials, Vol 13, Iss 15, p 3387 (2020)

    مصطلحات موضوعية: atomic layer deposition (ALD), aluminum nitride, hydrazine, trimethyl aluminum (TMA), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/1996-1944/13/15/3387; https://doaj.org/toc/1996-1944

    URL الوصول: https://doaj.org/article/7beaa3f9330b4b4da0d7e2dc2ef582cf

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  2. 2
    دورية أكاديمية
    Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

    المؤلفون: Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim

    المصدر: Materials, Vol 9, Iss 12, p 1007 (2016)

    مصطلحات موضوعية: review, atomic layer deposition, plasma-enhanced ALD (PEALD), silicon nitride, thermal ALD, surface reactions, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

    وصف الملف: electronic resource

    Relation: http://www.mdpi.com/1996-1944/9/12/1007; https://doaj.org/toc/1996-1944

    URL الوصول: https://doaj.org/article/d76035ab71fa49ca8cd48c91dd258dc7

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  3. 3
    Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

    المؤلفون: Arup Polley, Antonio T. Lucero, Varun Kumar, Archana Venugopal, Jiyoung Kim, Lanxia Cheng, Arul Vigneswar Ravichandran, Luigi Colombo, Robert R. Doering

    المصدر: IEEE Sensors Journal. 21:25675-25686

    مصطلحات موضوعية: Offset (computer science), Materials science, business.industry, Ambipolar diffusion, Infrasound, Noise (electronics), Modulation, Optoelectronics, Hall effect sensor, Flicker noise, Electrical and Electronic Engineering, business, Instrumentation, High dynamic range

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d075ef5b47b56d492ea8957e0c1940b8
    https://doi.org/10.1109/jsen.2021.3115996

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  4. 4
    Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

    المؤلفون: Jaidah Mohan, Akshay Sahota, Si Joon Kim, Jang-Sik Lee, Harrison Sejoon Kim, Min-Ji Kim, Yong Chan Jung, Antonio T. Lucero, Jiyoung Kim, Rino Choi

    المصدر: ACS Applied Electronic Materials. 3:2309-2316

    مصطلحات موضوعية: Materials science, business.industry, Doping, Low leakage, Electrochemistry, Electronic, Optical and Magnetic Materials, Hardware_GENERAL, Materials Chemistry, Optoelectronics, Point (geometry), Crystallite, business, Deposition (chemistry)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2c670b86dd70cf72d7431292f666d4e0
    https://doi.org/10.1021/acsaelm.1c00197

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  5. 5
    Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

    المؤلفون: Moon J. Kim, Arul Vigneswar Ravichandran, Antonio T. Lucero, Woong Choi, Hui Zhu, Jaebeom Lee, Zifan Che, Jiyoung Kim, Archana Venugopal, Lanxia Cheng, Robert M. Wallace, Luigi Colombo, Jaidah Mohan, Massimo Catalano

    المصدر: ACS Applied Materials & Interfaces. 12:36688-36694

    مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Graphene, 02 engineering and technology, Chemical vapor deposition, Substrate (electronics), 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Nanocrystalline material, 0104 chemical sciences, law.invention, Atomic layer deposition, chemistry.chemical_compound, chemistry, law, Boron nitride, Optoelectronics, General Materials Science, Thin film, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6934698ed2cd4820027ad44722337a45
    https://doi.org/10.1021/acsami.0c07548

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  6. 6
    Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

    المؤلفون: Byung Keun Hwang, Gary Goodman, Lanxia Cheng, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Xin Meng, Antonio T. Lucero, Si Joon Kim, Jiyoung Kim, Alan S. Wan, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Joy S. Lee, Robert M. Wallace

    المصدر: ACS Applied Materials & Interfaces. 10:44825-44833

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Hexachlorodisilane, Analytical chemistry, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, Cathode, law.invention, chemistry.chemical_compound, Atomic layer deposition, Semiconductor, chemistry, Silicon nitride, Impurity, law, 0103 physical sciences, General Materials Science, 0210 nano-technology, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23472c32f3fe282a6779bcd299a81952
    https://doi.org/10.1021/acsami.8b15291

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  7. 7
    Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

    المؤلفون: Young-Chul Byun, Arul Vigneswar Ravichandran, Jae-Gil Lee, Jiyoung Kim, Chadwin D. Young, Min-Woo Ha, Si Joon Kim, Antonio T. Lucero, Jaebeom Lee, Xin Meng

    المصدر: IEEE Electron Device Letters. 39:1195-1198

    مصطلحات موضوعية: 010302 applied physics, Materials science, Passivation, Silicon, Analytical chemistry, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Subthreshold slope, Cathode, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, chemistry.chemical_compound, Atomic layer deposition, chemistry, Silicon nitride, law, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e587262816288bb1b9eb11b8d1a0f795
    https://doi.org/10.1109/led.2018.2849100

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  8. 8
    Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

    المؤلفون: Jiyoung Kim, Luigi Colombo, Arul Vigneswar Ravichandran, Jaebeom Lee, Archana Venugopal, Arup Polley, Antonio T. Lucero, Lanxia Cheng, Chadwin D. Young

    المصدر: ECS Transactions. 86:51-57

    مصطلحات موضوعية: Materials science, Scale (ratio), Thermal oxide, business.industry, Optoelectronics, Wafer, business, Graphene field effect transistors

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdf487083f0219184f79cde60f9b36b9
    https://doi.org/10.1149/08602.0051ecst

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  9. 9
    Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

    المؤلفون: Jiyoung Kim, Jeanette Young, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Xiaobing Zhou, Joy S. Lee, Byung Keun Hwang, Xin Meng, Harrison Sejoon Kim, Antonio T. Lucero

    المصدر: ACS Applied Materials & Interfaces. 10:14116-14123

    مصطلحات موضوعية: 010302 applied physics, Materials science, Hexachlorodisilane, Analytical chemistry, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Cathode, law.invention, chemistry.chemical_compound, Atomic layer deposition, chemistry, X-ray photoelectron spectroscopy, Silicon nitride, law, 0103 physical sciences, General Materials Science, Fourier transform infrared spectroscopy, 0210 nano-technology, Refractive index

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de3fb5ad171b2a8c77318cc4789c6c5c
    https://doi.org/10.1021/acsami.8b00723

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  10. 10
    Performance Enhancement via Incorporation of ZnO Nanolayers in Energetic Al/CuO Multilayers

    المؤلفون: Yves J. Chabal, Antonio T. Lucero, Iman Abdallah, Carole Rossi, Lorena Marín, Yuzhi Gao, Jiyoung Kim, Maxime Vallet, Christophe Tenailleau, Alain Estève, Bénédicte Warot-Fonrose

    المساهمون: Équipe Nano-ingénierie et intégration des oxydes métalliques et de leurs interfaces (LAAS-NEO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Université Toulouse III - Paul Sabatier (UT3), University of Texas at Dallas [Richardson] (UT Dallas), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - INPT (FRANCE), Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), University of Texas at Dallas (USA), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)

    المصدر: Langmuir
    Langmuir, 2017, 33 (41), pp.11086-11093. ⟨10.1021/acs.langmuir.7b02964⟩
    Langmuir, American Chemical Society, 2017, 33 (41), pp.11086-11093. ⟨10.1021/acs.langmuir.7b02964⟩

    مصطلحات موضوعية: Materials science, Matériaux, Aluminate, nanothermite, Enthalpy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Zinc, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Barrier layer, Al, chemistry.chemical_compound, [CHIM.GENI]Chemical Sciences/Chemical engineering, Differential scanning calorimetry, Sputtering, 0103 physical sciences, Electrochemistry, Génie chimique, General Materials Science, Spectroscopy, 010304 chemical physics, [CHIM.MATE]Chemical Sciences/Material chemistry, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, CuO, nanolaminate, chemistry, Chemical engineering, Transmission electron microscopy, ZnO, 0210 nano-technology, Layer (electronics)

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed5c28c4142b60200442ea791e810bba
    https://doi.org/10.1021/acs.langmuir.7b02964

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