المؤلفون: Shanware, A., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Aur, S., Nicollian, P.E., McPherson, J., Colombo, L.

المصدر: 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. Reliability physics symposium Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International. :208-213 2003

Relation: International Reliability Physics Symposium

المؤلفون: Hu, Y., Anderson, D., Rotondaro, A., Obrien, S., Wei-Yung Hsu, Kraft, R., Tiner, P., Nicollian, P., Aur, S.

المصدر: 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) VLSI technology, systems, and applications VLSI Technology, Systems, and Applications, 1999. International Symposium on. :247-250 1999

Relation: Proceedings of International Symposium on VLSI Technology Systems and Applications

المؤلفون: Mehrotra, M., Hu, J.C., Jain, A., Shiau, W., Reddy, V., Aur, S., Rodder, M.

المصدر: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :419-422 1999

Relation: International Electron Devices Meeting 1999. Technical Digest

المؤلفون: Rangan, S., Krishnan, S., Amerasekara, A., Aur, S., Ashok, S.

المصدر: 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) Reliability physics Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International. :370-374 1999

Relation: 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual

المؤلفون: Gupta, I.J., Kraft, R., Krishnan, S., Gale, B., Aur, S., Rodder, M., Laaksonen, T.

المصدر: 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) Plasma process-induced damage Plasma Process-Induced Damage, 1998 3rd International Symposium on. :84-87 1998

Relation: 1998 3rd International Symposium on Plasma Process-Induced Damage

المؤلفون: Krishnan, S., Amerasekera, A., Rangan, S., Aur, S.

المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :601-604 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

المؤلفون: Rodder, M., Hattangady, S., Yu, N., Shiau, W., Nicollian, P., Laaksonen, T., Chao, C.P., Mehrotra, M., Lee, C., Murtaza, S., Aur, S.

المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :623-626 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

المؤلفون: Chatterjee, A., Chapman, R.A., Joyner, K., Otobe, M., Hattangady, S., Bevan, M., Brown, G.A., Yang, H., He, Q., Rogers, D., Fang, S.J., Kraft, R., Rotondaro, A.L.P., Terry, M., Brennan, K., Aur, S.-W., Hu, J.C., Tsai, H.-L., Jones, P., Wilk, G., Aoki, M., Rodder, M., Chen, I.-C.

المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :777-780 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

المؤلفون: Aur, S., Grider, T., McNeil, V., Holloway, T., Eklund, R.

المصدر: 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Reliability physics Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International. :180-183 1998

Relation: 1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual

المؤلفون: Rodder, M., Hanratty, M., Rogers, D., Laaksonen, T., Hu, J.C., Murtaza, S., Chao, C.-P., Hattangady, S., Aur, S., Amerasekera, A., Chen, I.-C.

المصدر: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :223-226 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest