يعرض 1 - 10 نتائج من 116 نتيجة بحث عن '"B. Sagnes"', وقت الاستعلام: 2.00s تنقيح النتائج
  1. 1
    Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray

    المؤلفون: J. El Beyrouthy, B. Sagnes, F. Pascal, M. Elsherif, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria

    المصدر: 2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eb1f5889b809dc380100c98fe99f30f1
    https://doi.org/10.1109/radecs50773.2020.9857722

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  2. 2
    Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

    المؤلفون: J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria

    المصدر: 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f8a97e6079b80e9e0fc78c539ed8feae
    https://doi.org/10.1109/radecs47380.2019.9745680

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  3. 3
    Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies

    المؤلفون: M. Seif, Alain Hoffmann, B. Sagnes, Daniel Gloria, F. Pascal, J. Elbeyrouthy, Sebastien Haendler, Pascal Chevalier

    المساهمون: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES)

    المصدر: ICM
    2017 29th International Conference on Microelectronics (ICM)
    International Conference on Microelectronics (ICM)
    International Conference on Microelectronics (ICM), 2017, Beyrouth, Lebanon

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Infrasound, Spice, Spectral density, 02 engineering and technology, BiCMOS, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), [SPI.TRON]Engineering Sciences [physics]/Electronics, 0103 physical sciences, Dispersion (optics), Optoelectronics, Figure of merit, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Common emitter

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99acb955a57c2de08ba1c1a36f247d28
    https://doi.org/10.1109/icm.2017.8268847

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  4. 4
    Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping

    المؤلفون: M. Seif, Daniel Gloria, F. Pascal, Sebastien Haendler, Pascal Chevalier, Alain Hoffmann, B. Sagnes

    المساهمون: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES)

    المصدر: 2017 International Conference on Noise and Fluctuations (ICNF)
    2017 International Conference on Noise and Fluctuations (ICNF), 2017, Vilnius, Lithuania

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, Electrical engineering, Biasing, 02 engineering and technology, Integrated circuit, BiCMOS, Noise figure, 01 natural sciences, Noise (electronics), [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, law, 11. Sustainability, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Flicker noise, business, ComputingMilieux_MISCELLANEOUS, Common emitter

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97c5e1cd1de338f5f7d840353d7282fb
    https://doi.org/10.1109/icnf.2017.7986001

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  5. 5
    Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

    المؤلفون: B. Sagnes, Carlos Navarro, Francois Andrieu, Frédéric Martinez, Sorin Cristoloveanu, Maryline Bawedin

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-JS03-0001,AMNESIA,Dispositifs Mémoires Nanométriques Innovants pour Applications Ultra Basse Consommation(2011), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Journal of Applied Physics
    Journal of Applied Physics, American Institute of Physics, 2015, 118 (18), pp.184504. ⟨10.1063/1.4935453⟩
    Journal of Applied Physics, 2015, 118 (18), pp.184504. ⟨10.1063/1.4935453⟩

    مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, Transistor, General Physics and Astronomy, chemistry.chemical_element, Silicon on insulator, Nanotechnology, 02 engineering and technology, Semiconductor device, 021001 nanoscience & nanotechnology, 01 natural sciences, Semimetal, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, law, 0103 physical sciences, MOSFET, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd6934883f9e8aee88d32f71c8c48abd
    https://hal.archives-ouvertes.fr/hal-01644374

    Find this article in full text from Scitation.
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  6. 6
    Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

    المؤلفون: Philippe Roche, V. Correas, B. Sagnes, Frédéric Saigné, Gilles Gasiot, Frédéric Wrobel, Jerome Boch

    المساهمون: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), STMicroelectronics [Crolles] (ST-CROLLES)

    المصدر: IEEE Transactions on Nuclear Science
    IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2009, 56 (4), pp.2050-2055. ⟨10.1109/TNS.2009.2013622⟩

    مصطلحات موضوعية: 010302 applied physics, Nuclear and High Energy Physics, Work (thermodynamics), Materials science, 010308 nuclear & particles physics, 01 natural sciences, Molecular physics, Upset, [SPI.TRON]Engineering Sciences [physics]/Electronics, Ion, Cross section (physics), Nuclear Energy and Engineering, Single event upset, 0103 physical sciences, Electrode, Electronic engineering, Charge carrier, Static random-access memory, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::106ade7b16d8e4bcbb9652632e694c70
    https://doi.org/10.1109/tns.2009.2013622

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  7. 7
    Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain

    المؤلفون: N. Renaud, Frédéric Saigné, Jerome Boch, S. Mouton, C. Heng, D. Truyen, J.-R. Vaille, B. Sagnes, M. Briet, E. Leduc

    المصدر: IEEE Transactions on Nuclear Science. 55:2001-2006

    مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, business.industry, Spice, Semiconductor device modeling, Electrical engineering, Atmospheric temperature range, Computational physics, Nuclear Energy and Engineering, CMOS, Inverter, Transient (oscillation), Sensitivity (control systems), Electrical and Electronic Engineering, business, Technology CAD

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3e4d7c81c9116ff18e99c53f3ed2f300
    https://doi.org/10.1109/tns.2008.2000851

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  8. 8
    Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM

    المؤلفون: Gilles Gasiot, Philippe Roche, Frédéric Saigné, B. Sagnes, Jerome Boch, V. Correas, D. Giot

    المصدر: IEEE Transactions on Nuclear Science. 54:2413-2418

    مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Passivation, 010308 nuclear & particles physics, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Radiation, 01 natural sciences, 020202 computer hardware & architecture, PMOS logic, Computer Science::Hardware Architecture, Cross section (physics), Computer Science::Emerging Technologies, Nuclear Energy and Engineering, CMOS, Single event upset, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Calibration, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::59ce80bf9df2d6ae60297d4464469f8f
    https://doi.org/10.1109/tns.2007.910038

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  9. 9
    Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors

    المؤلفون: Pascal Chevalier, B. Sagnes, Alain Hoffmann, F. Pascal, Sebastien Haendler, M. Seif, Daniel Gloria

    المساهمون: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES)

    المصدر: 2015 International Conference on Noise and Fluctuations (ICNF)
    2015 International Conference on Noise and Fluctuations (ICNF), 2015, Xian, China

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Bipolar junction transistor, Transistor, Electrical engineering, Y-factor, 02 engineering and technology, BiCMOS, Atmospheric temperature range, 01 natural sciences, Noise (electronics), Temperature measurement, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Flicker noise, business, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19cab88189f6aad28b689f01b3d30a1d
    https://doi.org/10.1109/icnf.2015.7288603

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  10. 10
    Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs

    المؤلفون: B. Sagnes, Pascal Chevalier, Sebastien Haendler, Daniel Gloria, Alain Hoffmann, F. Pascal, M. Seif

    المصدر: 2015 International Conference on Noise and Fluctuations (ICNF).

    مصطلحات موضوعية: Materials science, Noise generator, Noise-figure meter, business.industry, Infrasound, Bipolar junction transistor, otorhinolaryngologic diseases, Optoelectronics, Flicker noise, Y-factor, business, Noise (electronics), Common emitter

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::41fdc6da99113d78f609eb6f7c37576b
    https://doi.org/10.1109/icnf.2015.7288551

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