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المؤلفون: Jing-Cheng Lin, Hon-Jarn Lin, R. Chen, Hsien-Chin Lin, Ming-Fang Wang, D. H. Chen, S.S. Lin, F. C. Yang, Huan-Neng Chen, S. M. Jang, Jonathan Chang, Kevin Huang, L. Yuan, Ming-Huan Tsai, B. R. Yang, C. C. Yeh, Tze-Liang Lee, S. L. Shue, C. H. Wang, W. Chang, K. F. Yu, C. O. Chui, Yung-Chow Peng, Y. Ku, Chuan-Ping Hou, Yung-Hsien Wu, Jyh-Cherng Sheu, Cheng Yun-Wei, Jun He, Po-Kang Wang, Y. K. Leung, C. P. Chen, Derek Lin, Geoffrey Yeap, Q. Fu, Y. C. Huang, Chun-Yen Chang, Kuang-Hsin Chen, X. Chen, Yung-Shun Chen, H. T. Yang, Ryan Lu, Chung-Kai Lin, S. H. Sun, T. S. Chang, H. T. Chiang, Chun-Kuang Chen, M. Cao, P. Hung, H. C. Lin, Jau-Yi Wu, F. L. Lai, B. Z. Tien, C. W. Wu, Yee-Chia Yeo, L. C. Lu, H. L. Shang, C. P. Lin, Wei-Heng Lin
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Schedule, Computer science, business.industry, Extreme ultraviolet lithography, 02 engineering and technology, 021001 nanoscience & nanotechnology, Supercomputer, Chip, 01 natural sciences, CMOS, Embedded system, 0103 physical sciences, Node (circuits), Static random-access memory, 0210 nano-technology, business, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1b8ee1b2522d89b8b8ca2781720e4a62
https://doi.org/10.1109/iedm19573.2019.8993577 -
2دورية أكاديمية
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