المؤلفون: B.-N. Bozon, J.-Ph. Reynard, Y. Le Friec, Sylvie Favier, Yann Mazel, K. Dabertrand, Patrice Gergaud, R. Famulok, Ph. Rodriguez, Fabrice Nemouchi, C. Jahan, Bernard Previtali, F. Boyer

المساهمون: Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Applied Materials France, ANR-11-EQPX-0010,CRGF,Lignes synchrotron françaises à l'ESRF(2011), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010), ANR: ANR-10-AIRT-05,Programme Investissements d’Avenir

المصدر: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2017, 71, pp.433-440. ⟨10.1016/j.mssp.2017.08.033⟩
Materials Science in Semiconductor Processing, Elsevier, 2017, 71, pp.433-440. ⟨10.1016/j.mssp.2017.08.033⟩

مصطلحات موضوعية: Materials science, Interconnects, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Tungsten, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Atomic layer deposition, Plasma-enhanced chemical vapor deposition, Low resistance, Contact, 0103 physical sciences, General Materials Science, Thin film, Composite material, 010302 applied physics, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, X-ray reflectivity, Tungsten film, chemistry, Mechanics of Materials, PCRAM, Liner, 0210 nano-technology, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92b6f3a32feea7f719e44744e05d4fc6
https://doi.org/10.1016/j.mssp.2017.08.033

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