يعرض 1 - 10 نتائج من 59 نتيجة بحث عن '"Bhat, I. B."', وقت الاستعلام: 1.07s تنقيح النتائج
  1. 1
    مؤتمر
    High voltage 4H-SiC Bi-directional IGBTs

    المؤلفون: Chowdhury, S., Hitchcock, C., Dahal, R., Bhat, I. B., Chow, T. P.

    المصدر: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :463-466 Jun, 2016

    Relation: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates

    المؤلفون: Chowdhury, S., Hitchcock, C., Dahal, R., Bhat, I. B., Chow, T. P.

    المصدر: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on. :353-356 May, 2015

    Relation: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  3. 3
    دورية أكاديمية
    Low-Noise Preamplifier Design Considerations for Large Area High Capacitance Solid-State Neutron Detectors

    المؤلفون: English, E., Weltz, A., Dahal, R., Lu, J. J.-Q., Danon, Y., Bhat, I. B., Hella, M. M.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 63(1):304-315 Feb, 2016

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  4. 4
    دورية أكاديمية
    High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact

    المؤلفون: Sharma, S., Li, C., Bhat, I. B., Chow, T. P.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 55(12):3360-3366 Dec, 2008

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  5. 5
    مؤتمر
    lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control

    المؤلفون: Losee, P. A., Li, C., Wang, Y., Sharma, S. K., Chow, T. P., Bhat, I. B., Stahlbush, R. E., Gutmann, R. J.

    المصدر: Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on. :97-100 May, 2007

    Relation: Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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  6. 6
    دورية أكاديمية
    High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

    المؤلفون: Rao, S. R., Shintri, S. S., Markunas, J. K., Jacobs, R. N., Bhat, I. B.

    المصدر: Journal of Electronic Materials. August 2011 40(8):1790-1794

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  7. 7
    دورية أكاديمية
    Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates

    المؤلفون: Rao, S. R., Shintri, S. S., Markunas, J. K., Jacobs, R. N., Bhat, I. B.

    المصدر: Journal of Electronic Materials. July 2010 39(7):996-1000

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  8. 8
    دورية أكاديمية
    A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

    المؤلفون: Rajagopalan, G., Reddy, N. S., Ehsani, H., Bhat, I. B., Dutta, P. S., Gutmann, R. J., Nichols, G., Sulima, O.

    المصدر: Journal of Electronic Materials. November 2003 32(11):1317-1321

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  9. 9
    دورية أكاديمية
    Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry

    المؤلفون: Cui, Hao, Bhat, I. B., Venkatasubramanian, R.

    المصدر: Journal of Electronic Materials. 28(10):1111-1114

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  10. 10
    دورية أكاديمية
    Application of spectroscopic ellipsometry for real-time control of CdTe and HgCdTe growth in an OMCVD system

    المؤلفون: Murthy, S. Dakshina, Bhat, I. B., Johs, B., Pittal, S., He, P.

    المصدر: Journal of Electronic Materials. May 1995 24(5):445-449

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