المؤلفون: Bloomfield, M.O., Yeon Ho Im, Cale, T.S.

المصدر: International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :19-22 2003

Relation: IEEE International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Yeon Ho Im, Bloomfield, M.O., Sukam, C.P., Tichy, J.A., Cale, T.S., Jongwon Seok

المصدر: International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :307-310 2003

Relation: IEEE International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Bloomfield, M.O., Bentz, D.N., Sukharev, V., Cale, T.S.

المصدر: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Reliability physics symposium, 2007. proceedings. 45th annual. ieee international. :644-645 Apr, 2007

Relation: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

المؤلفون: Bentz, D.N., Bloomfield, M.O., Huang, H., Lu, J.-Q., Gutmann, R.J., Cale, T.S.

المصدر: 2006 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2006 International Conference on. :345-348 Sep, 2006

Relation: 2006 International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Bloomfield, M.O., Bentz, D.N., Lu, J.-Q., Gutmann, R.J., Cale, T.S.

المصدر: In Microelectronic Engineering 2007 84(11):2750-2756

المؤلفون: Prasad, V. ^*, Bloomfield, M.O., Richards, D.F., Liang, H., Cale, T.S.

المصدر: In Vacuum 2002 65(3):443-455

المؤلفون: Richards, D.F., Bloomfield, M.O., Soukane, S., Cale, T.S. ^*

المصدر: In Vacuum 2000 59(1):168-178

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