يعرض 1 - 4 نتائج من 4 نتيجة بحث عن '"Bo Chen Tsou"', وقت الاستعلام: 0.75s تنقيح النتائج
  1. 1
    مؤتمر
    High performance GaInP/GaAs HBT radio frequency integrated circuits at 5 GHz

    المؤلفون: Chinchun Meng, Tzung-Han Wu, Mingchi Lin, Ching Hung Chen, Jhih-Ci Jhong, Yu-Wen Chang, Sheng-Che Tseng, Bo-Chen Tsou, Da-Wei Sung, Hsu, S.K., Chiang, M.H., Shey-Shi Lu, Hsiao-Chin Chen, Ming-Chou Chiang, Shih-An Yu, Guo-Wei Huang

    المصدر: 2005 Asia-Pacific Microwave Conference Proceedings Asia-Pacific Microwave Conference Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings. 2:4 pp. 2005

    Relation: 2005 Asia-Pacific Microwave Conference

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  2. 2
    The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices

    المؤلفون: Jen Yi Su, Guo-Wei Huang, Chinchun Meng, Bo Chen Tsou

    المصدر: IEICE Transactions on Electronics. :520-523

    مصطلحات موضوعية: Materials science, business.industry, Bicmos process, Bipolar junction transistor, Electrical engineering, Optoelectronics, Electrical and Electronic Engineering, business, Noise (electronics), Capacitance, Electronic, Optical and Magnetic Materials, Ion

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::508674d32e360ee8a9c1ed1e6495bbd8
    https://doi.org/10.1093/ietele/e89-c.4.520

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  3. 3
    Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements

    المؤلفون: Sheng Che Tseng, Chinchun Meng, Bo Chen Tsou

    المصدر: IEICE Transactions on Electronics. :1127-1132

    مصطلحات موضوعية: Interconnection, Materials science, business.industry, Heterojunction bipolar transistor, Doping, Electrical engineering, Schottky gate, Transit time, Electronic, Optical and Magnetic Materials, Frequency measurements, Physics::Accelerator Physics, Optoelectronics, Electrical and Electronic Engineering, business, Sheet resistance, Common emitter

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::054b525c23e6ad154b5d866dca869e20
    https://doi.org/10.1093/ietele/e88-c.6.1127

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  4. 4
    High Performance GaInP/GaAs HBT Radio Frequency Integrated Circuits at 5 GHz

    المؤلفون: Da-Wei Sung, Shih-An Yu, Shey-Shi Lu, Tzung-Han Wu, M. H. Chiang, Chinchun Meng, Ching Hung Chen, S. K. Hsu, Ming-Chou Chiang, Sheng-Che Tseng, Guo-Wei Huang, Mingchi Lin, Jhih-Ci Jhong, Bo-Chen Tsou, YuWen Chang, Hsiao-Chin Chen

    المصدر: 2005 Asia-Pacific Microwave Conference Proceedings.

    مصطلحات موضوعية: Materials science, Heterojunction bipolar transistor, Amplifier, Integrated circuit, Image response, law.invention, Gallium arsenide, chemistry.chemical_compound, Current mirror, chemistry, law, Electronic engineering, Cascode, Radio frequency

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::935e13dc9ce74bbc43055316d1dccad4
    https://doi.org/10.1109/apmc.2005.1606393

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