يعرض 1 - 10 نتائج من 134 نتيجة بحث عن '"Boltovets, N. S."', وقت الاستعلام: 1.06s تنقيح النتائج
  1. 1
    مؤتمر
    Investigation of temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si OHMIC contacts subjected to microwave irradiation

    المؤلفون: Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya. Ya., Sachenko, A. V., Sheremet, V. N., Vinogradov, A. O.

    المصدر: 2011 21st International Crimean Conference "Microwave & Telecommunication Technology" Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference. :669-671 Sep, 2011

    Relation: 2011 21st International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2011)

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  2. 2
    مؤتمر
    Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes

    المؤلفون: Belyaev, A. E., Basanets, V. V., Boltovets, N. S., Zorenko, A. V., Konakova, R. V., Kolesnik, N. V., Kudryk, Ya. Ya., Milenin, V. V., Ataubaeva, A. B.

    المصدر: 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference. :171-173 Sep, 2010

    Relation: 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

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  3. 3
    تقرير
    The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts

    المؤلفون: Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vitusevich, S. A., Konakova, R. V., Novitskii, S. V., Sheremet, V. N.

    مصطلحات موضوعية: Condensed Matter - Materials Science

    URL الوصول: http://arxiv.org/abs/1401.1658

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  4. 4
    مؤتمر
    Negative temperature coefficient of breakdown voltage in the Au-Ti-n-n+ 6h SiC Schottky-barrier diodes

    المؤلفون: Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Krivutsa, V. A., Kudryk, Ya. Ya., Lebedev, A. A., Milenin, V. V.

    المصدر: 2009 19th International Crimean Conference Microwave & Telecommunication Technology Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference. :537-539 Sep, 2009

    Relation: 2009 19th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2009)

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  5. 5
    تقرير
    Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts

    المؤلفون: Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya. Ya., Sachenko, A. V., Sheremet, V. N.

    المصدر: Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010.- V.13, N4.- P.436-438

    مصطلحات موضوعية: Condensed Matter - Materials Science

    URL الوصول: http://arxiv.org/abs/1104.1030

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  6. 6
    مؤتمر
    On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes

    المؤلفون: Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Sveshnikov, Yu. N.

    المصدر: 2007 17th International Crimean Conference - Microwave & Telecommunication Technology Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference. :551-553 Sep, 2007

    Relation: 2007 17th International Crimean Conference - Microwave & Telecommunication Technology

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  7. 7
    مؤتمر
    The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density

    المؤلفون: Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Konakova, R. V., Kudryk, Ya. Ya., Panteleev, V. N., Sheremet, V. N.

    المصدر: 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference. :97-98 Sep, 2012

    Relation: 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2012)

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  8. 8
    دورية أكاديمية
    Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures

    المؤلفون: Belyaev, A. E., Boltovets, N. S., Klad’ko, V. P., Safryuk-Romanenko, N. V., Lubchenko, A. I., Sheremet, V. N., Shynkarenko, V. V.Aff1, Slepova, A. S., Pilipenko, V. A., Petlitskaya, T. V., Pilipchuk, A. S., Konakova, R. V., Sachenko, A. V.

    المصدر: Semiconductors. 53(4):469-476

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  9. 9
    دورية أكاديمية
    Temperature dependences of the contact resistivity in ohmic contacts to n +-InN

    المؤلفون: Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Brunkov, P. N., Jmerik, V. N., Ivanov, S. V., Kapitanchuk, L. M., Konakova, R. V., Klad’ko, V. P., Romanets, P. N., Saja, P. O., Safryuk, N. V., Sheremet, V. N.

    المصدر: Semiconductors. April 2015 49(4):461-471

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  10. 10
    دورية أكاديمية
    Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K

    المؤلفون: Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kapitanchuk, L. M., Sheremet, V. N., Sveshnikov, Yu. N., Pilipchuk, A. S.

    المصدر: Semiconductors. October 2014 48(10):1308-1311

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