المؤلفون: Boukhari, M., Abdelkafi, Z.^{Aff1, IDs11664023106755_cor2}, Abdelmoula, N., Khemakhem, H., Randrianantoandro, N.

المصدر: Journal of Electronic Materials. 52(11):7416-7428

المؤلفون: Delprat, S., Riad Boukhari, M.

المصدر: IEEE Transactions on Vehicular Technology IEEE Trans. Veh. Technol. Vehicular Technology, IEEE Transactions on. 70(7):6500-6513 Jul, 2021

المؤلفون: Oumar, D. A., Boukhari, M. I., Taha, M. A., Capraro, S., Pietroy, D., Chatelon, J. P., Rousseau, J. J.

المصدر: 2019 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP) Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP), 2019 Symposium on. :1-4 May, 2019

Relation: 2019 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP)

المؤلفون: Boukhari, M., Abdelkafi, Z.^{Aff1, IDs10854023106595_cor2}, Abdelmoula, N., Khemakhem, H., Randrianantoandro, N.

المصدر: Journal of Materials Science: Materials in Electronics. 34(15)

المؤلفون: Boukhari, M. R., Chaibet, A., Boukhnifer, M., Glaser, S.

المصدر: 2016 13th International Multi-Conference on Systems, Signals & Devices (SSD) Systems, Signals & Devices (SSD), 2016 13th International Multi-Conference on. :241-248 Mar, 2016

Relation: 2016 13th International Multi-Conference on Systems, Signals & Devices (SSD)

المؤلفون: Boukhari, M. I.^{Aff1, Aff3}, Oumar, D. A.^{Aff2, Aff3}, Capraro, S., Pietroy, D., Chatelon, J. P., Rousseau, J. J.

المصدر: Journal of Electronic Testing: Theory and Applications. 37(3):345-355

المؤلفون: Oumar, D. A.^{Aff1, Aff2}, Boukhari, M. I.^{Aff1, Aff3}, Capraro, S.^Aff1, Piétroy, D., Chatelon, J. P., Rousseau, J. J.

المصدر: Analog Integrated Circuits and Signal Processing: An International Journal. 104(3):311-319

المؤلفون: Boukhari, M., Abdelkafi, Z.^{Aff1, IDs00339021048211_cor2}, Abdelmoula, N., Khemakhem, H.

المصدر: Applied Physics A: Materials Science & Processing. 127(9)

المؤلفون: Oumar, D. A.^{Aff1, Aff2}, Boukhari, M. I.^{Aff1, Aff3}, Taha, M. A.^{Aff1, Aff3}, Capraro, S.^Aff1, Piétroy, D., Chatelon, J. P., Rousseau, J. J.

المصدر: Journal of Electronic Testing: Theory and Applications. 35(2):245-252

المؤلفون: Boukhari, M., Abdelkafi, Z., Abdelmoula, N., Khemakhem, H., Randrianantoandro, N.

المصدر: Journal of Electronic Materials; Nov2023, Vol. 52 Issue 11, p7416-7428, 13p

مصطلحات موضوعية: MOSSBAUER spectroscopy, RAMAN spectroscopy, MOSSBAUER effect, X-ray diffraction, DIELECTRICS, POLYCRYSTALLINE semiconductors, POLYCRYSTALLINE silicon