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1دورية أكاديمية
المؤلفون: Sirkar, A., Sadhabiriss, D., Brown, S. L.
المصدر: SA Heart Journal, Vol 15, Iss 3, Pp 202-209 (2018)
مصطلحات موضوعية: Acute myocardial infarction, South African regional hospital, Lipid profiles, Diseases of the circulatory (Cardiovascular) system, RC666-701
وصف الملف: electronic resource
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2مؤتمر
المؤلفون: Hu, G., Safranski, C., Sun, J. Z., Hashemi, P., Brown, S. L., Bruley, J., Buzi, L., D'Emic, C. P., Galligan, E., Gottwald, M. G., Gunawan, O., Lee, J., Karimeddiny, S., Trouilloud, P. L., Worledge, D. C.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :10.2.1-10.2.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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3مؤتمر
المؤلفون: Worledge, D. C., Safranski, C., Hu, G., Sun, J. Z., Hashemi, P., Brown, S. L., Buzi, L., D'Emic, C. P., Gottwald, M. G., Gunawan, O., Jung, H., Karimeddiny, S., Kim, J., Trouilloud, P. L.
المصدر: 2022 IEEE 33rd Magnetic Recording Conference (TMRC) Magnetic Recording Conference (TMRC), 2022 IEEE 33rd. :1-2 Aug, 2022
Relation: 2022 IEEE 33rd Magnetic Recording Conference (TMRC)
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4مؤتمر
المؤلفون: Safranski, C., Hu, G., Sun, J. Z., Hashemi, P., Brown, S. L., Buzi, L., D'Emic, C. P., Edwards, E. R. J., Galligan, E., Gottwald, M. G., Gunawan, O., Karimeddiny, S., Jung, H., Kim, J., Latzko, K., Trouilloud, P. L., Zare, S., Worledge, D. C.
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :288-289 Jun, 2022
Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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5دورية أكاديمية
المؤلفون: Houlder, E. L.Aff1, Aff2, Costain, A. H.Aff1, Aff2, Nambuya, I.Aff1, Aff3, Brown, S. L., Koopman, J. P. R., Langenberg, M. C. C., Janse, J. J., Hoogerwerf, M. A., Ridley, A. J. L., Forde-Thomas, J. E., Colombo, S. A. P., Winkel, B. M. F., Galdon, A. A., Hoffmann, K. F., Cook, P. C.Aff1, Aff5, Roestenberg, M., Mpairwe, H., MacDonald, A. S.Aff1, IDs4146702337502z_cor18
المصدر: Nature Communications. 14(1)
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6مؤتمر
المؤلفون: Hu, G., Lauer, G., Sun, J. Z., Hashemi, P., Safranski, C., Brown, S. L., Buzi, L., Edwards, E. R. J., D'Emic, C. P., Galligan, E., Gottwald, M. G., Gunawan, O., Jung, H., Kim, J., Latzko, K., Nowak, J. J., Trouilloud, P. L., Zare, S., Worledge, D. C.
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :2.5.1-2.5.4 Dec, 2021
Relation: 2021 IEEE International Electron Devices Meeting (IEDM)
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7مؤتمرDemonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node
المؤلفون: Edwards, E. R. J., Hu, G., Brown, S. L., D'Emic, C. P., Gottwald, M. G., Hashemi, P., Jung, H., Kim, J., Lauer, G., Nowak, J. J., Sun, J. Z., Suwannasiri, T., Trouilloud, P. L., Woo, S., Worledge, D. C.
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :24.4.1-24.4.4 Dec, 2020
Relation: 2020 IEEE International Electron Devices Meeting (IEDM)
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8مؤتمر
المؤلفون: Hu, G., Nowak, J. J., Gottwald, M. G., Brown, S. L., Doris, B., D'Emic, C. P., Hashemi, P., Houssameddine, D., He, Q., Kim, D., Kim, J., Kothandaraman, C., Lauer, G., Lee, H K, Marchack, N., Reuter, M., Robertazzi, R. P., Sun, J. Z., Suwannasiri, T., Trouilloud, P. L., Woo, S., Worledge, D. C.
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :2.6.1-2.6.4 Dec, 2019
Relation: 2019 IEEE International Electron Devices Meeting (IEDM)
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9مؤتمر
المؤلفون: Sun, J. Z., Robertazzi, R. P., Nowak, J. J., Trouilloud, P. L., Hu, G., Gaidis, M. C., Brown, S. L., Abraham, D. W., O'Sullivan, E. J., Gallagher, W. J., Worledge, D. C., Kent, A. D.
المصدر: 69th Device Research Conference Device Research Conference (DRC), 2011 69th Annual. :171-174 Jun, 2011
Relation: 2011 69th Annual Device Research Conference (DRC)
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10مؤتمر
المؤلفون: Hu, G., Gottwald, M. G., He, Q., Park, J. H., Lauer, G., Nowak, J. J., Brown, S. L., Doris, B., Edelstein, D., Evarts, E. R., Hashemi, P., Khan, B., Kim, Y. H., Kothandaraman, C., Marchack, N., O'Sullivan, E. J., Reuter, M., Robertazzi, R. P., Sun, J. Z., Suwannasiri, T., Trouilloud, P. L., Zhu, Y., Worledge, D. C.
المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :38.3.1-38.3.4 Dec, 2017
Relation: 2017 IEEE International Electron Devices Meeting (IEDM)