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1دورية أكاديمية
المؤلفون: Bufler, F.M., Arimura, H., Favia, P., Eneman, G., Matagne, P., Horiguchi, N., Hellings, G.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(11):6384-6387 Nov, 2022
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2دورية أكاديمية
المؤلفون: Rawat, A., Sharan, N., Jang, D., Chiarella, T., Bufler, F.M., Catthoor, F., Parvais, B., Ganguly, U.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(3):976-980 Mar, 2021
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3دورية أكاديمية
المؤلفون: Bufler, F.M., Jang, D., Hellings, G., Eneman, G., Matagne, P., Spessot, A., Na, M.H.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):4701-4704 Nov, 2020
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4دورية أكاديمية
المؤلفون: Sharan, N., Shaik, K.A., Jang, D., Schuddinck, P., Yakimets, D., Bardon, M.G., Mitard, J., Arimura, H., Bufler, F.M., Eneman, G., Collaert, N., Parvais, B., Spessot, A., Mocuta, A.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(11):4997-5002 Nov, 2019
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5دورية أكاديمية
المؤلفون: Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F.M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B.T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(11):5165-5171 Nov, 2018
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6مؤتمر
المؤلفون: Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Desphande, V., Bufler, F.M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., Heyn, V. De, Mocuta, D., Collaert, N.
المصدر: 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :69-70 Jun, 2018
Relation: 2018 IEEE Symposium on VLSI Technology
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7دورية أكاديمية
المؤلفون: Bufler, F.M., Ritzenthaler, R., Mertens, H., Eneman, G., Mocuta, A., Horiguchi, N.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 39(11):1628-1631 Nov, 2018
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8مؤتمر
المؤلفون: Bufler, F.M., Schenk, A.
المصدر: 2005 International Conference On Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on. :155-158 2005
Relation: 2005 International Conference On Simulation of Semiconductor Processes and Devices
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9مؤتمر
المؤلفون: Bufler, F.M.
المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :601-604 2004
Relation: 2004 International Electron Devices Meeting
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10مؤتمر
المؤلفون: Bufler, F.M., Zechner, C., Schenk, A., Fichtner, W.
المصدر: International Conference on Simulation of Semiconductor Processes and Devices Simulation of semiconductor processes Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on. :159-162 2002
Relation: 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002)