يعرض 1 - 10 نتائج من 14 نتيجة بحث عن '"Byeong-Yun Nam"', وقت الاستعلام: 1.09s تنقيح النتائج
  1. 1
    مؤتمر
    A robust alternative for the DRAM capacitor of 50 nm generation

    المؤلفون: Kwang Hee Lee, Suk-Jin Chung, Jin Yong Kim, Ki-Chul Kim, Jae-Soon Lim, Kyuho Cho, Jinil Lee, Jeong-Hee Chung, HanJin Lim, KyungIn Choi, Sungho Han, SooIk Jang, Byeong-Yun Nam, Cha-Young Yoo, Sung-Tae Kim, U-In Chung, Joo-Tae Moon, Byung-Il Ryu

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :841-844 2004

    Relation: 2004 International Electron Devices Meeting

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  2. 2
    مؤتمر
    DRAM scaling-down to 0.1 /spl mu/m generation using bitline spacerless storage node SAC and RIR capacitor with TiN contact plug

    المؤلفون: Beom-Jun Jin, Young-Pil Kim, Byeong-Yun Nam, Hyoung-Joon Kim, Young-Wook Park, Joo-Tae Moon

    المصدر: 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) VLSI technology VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on. :127-128 2001

    Relation: 2001 Symposium on VLSI Technology

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  3. 3
    مؤتمر
    Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor for multigigabit-scale DRAM generation

    المؤلفون: Wan Don Kim, Jin Won Kim, Seok Jun Won, Sang Don Nam, Byeong Yun Nam, Cha Young Yoo, Young Wook Park, Sang In Lee, Moon Yong Lee

    المصدر: 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) VLSI technology VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on. :100-101 2000

    Relation: 2000 Symposium on VLSI Technology. Digest of Technical Papers

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  4. 4
    High temperature platinum etching using Ti mask layer

    المؤلفون: Won Jong Yoo, Joo-Tae Moon, Tae-Hyuk Ahn, Byeong-Yun Nam, Moonyong Lee, Byong-Sun Ju, Kim Hyoun-Woo, Chang-Jin Kang

    المصدر: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2151-2155

    مصطلحات موضوعية: Materials science, business.industry, fungi, technology, industry, and agriculture, Analytical chemistry, Surfaces and Interfaces, Substrate (electronics), Condensed Matter Physics, Isotropic etching, Surfaces, Coatings and Films, stomatognathic system, Sputtering, Etching (microfabrication), Optoelectronics, Wafer, Dry etching, Reactive-ion etching, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2d2374572f16378ed4e83725648ebeb4
    https://doi.org/10.1116/1.581741

    Find this article in full text from Scitation.
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  5. 5
    A robust alternative for the DRAM capacitor of 50nm generation

    المؤلفون: Suk-Jin Chung, Cha-young Yoo, Soo-Ik Jang, Kyu-Ho Cho, Jin Yong Kim, Joo-Tae Moon, Byeong-Yun Nam, Jae-soon Lim, Ki-chul Kim, U-In Chung, Byung-Il Ryu, Han-jin Lim, Kyung-In Choi, Sung-ho Han, Kwang-Hee Lee, Jin-Il Lee, Jeong-Hee Chung, Sung-Tae Kim

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

    مصطلحات موضوعية: Materials science, business.industry, Dram capacitor, Electrical engineering, chemistry.chemical_element, Insulator (electricity), Dielectric, law.invention, Capacitor, chemistry, law, Optoelectronics, Thermal stability, business, Tin, Dram, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b4758eddec777464dd4a6d10c658b5fb
    https://doi.org/10.1109/iedm.2004.1419308

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  6. 6
    Highly manufacturable sub-100 nm DRAM integrated with full functionality

    المؤلفون: K. Fujihara, S.J. Heo, Jeong-Hee Chung, J.D. Ryu, Jong Jin Lee, J.K. Cho, C. J. Choi, Gil Heyun Choi, Yong-Jun Lee, S.P. Yoon, J.W. Lee, JiYeon Ku, Joo Tae Moon, Young-Gu Kim, Bomsoo Kim, S. Choi, Sun-Ghil Lee, M.B. Lee, U-In Chung, Dong Chan Kim, Byeong Yun Nam

    المصدر: 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

    مصطلحات موضوعية: Electrolytic capacitor, Materials science, business.industry, Transistor, Nanotechnology, Chemical vapor deposition, Integrated circuit design, Capacitance, law.invention, Capacitor, Parasitic capacitance, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d59e5ca568ac5a105f275c17f5880681
    https://doi.org/10.1109/vlsit.2002.1015385

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  7. 7
    The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

    المؤلفون: Jong Moon Park, I.B. Chung, Chang-Sub Lee, Joonsuk Kim, Hyun-Mog Park, Myung Yung Jeong, Hoonki Kim, Jung-In Han, Mann Ho Cho, H.K. Hwang, Yong-lack Choi, S.Y. Kim, Byeong Yun Nam, S.H. Chung, Jintaek Park, Yang-Keun Park, H.S. Kim, D.I. Kim, D.S. Hwang, J. H. Lee, Young-Nam Hwang, K. Kim, D.H. Kim, J.W. Lee, N.J. Kang, S. Kim, Byung-lyul Park

    المصدر: Scopus-Elsevier

    مصطلحات موضوعية: Materials science, business.industry, Contact resistance, Transistor, Planar array, Electrical engineering, Substrate (electronics), law.invention, Capacitor, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Node (circuits), Dry etching, business, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf07ef51c3a966257db3d4a6f3331a88
    https://doi.org/10.1109/vlsit.2003.1221061

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  8. 8
    DRAM scaling-down to 0.1 μm generation using bitline spacerless storage node SAC and RIR capacitor with TiN contact plug

    المؤلفون: Young-pil Kim, Beom-jun Jin, Byeong-Yun Nam, Hyoung-joon Kim, Young-wook Park, Joo-Tae Moon

    المصدر: 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

    مصطلحات موضوعية: Electrolytic capacitor, Materials science, business.industry, Contact resistance, Transistor, Electrical engineering, Capacitance, Electrical contacts, law.invention, Capacitor, law, business, Dram, Leakage (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3997fb49f69ad1723f232cc4f7cc4922
    https://doi.org/10.1109/vlsit.2001.934982

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  9. 9
    Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor for multigigabit-scale DRAM generation

    المؤلفون: Cha Young Yoo, Sang Don Nam, Seok Jun Won, Young Wook Park, Moon Yong Lee, Sang-In Lee, Wan Don Kim, Byeong Yun Nam, Jin-Won Kim

    المصدر: 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

    مصطلحات موضوعية: Electrode material, Materials science, business.industry, chemistry.chemical_element, Capacitance, law.invention, Metal, Capacitor, chemistry, law, visual_art, Electrode, visual_art.visual_art_medium, Electronic engineering, Optoelectronics, Tin, business, Dram, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ca9a88cd8ba44132724d72eeeed62ce7
    https://doi.org/10.1109/vlsit.2000.852785

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  10. 10
    Heterogeneous Particle Formation during Low Pressure Etching of Silicon Dioxide

    المؤلفون: Woo Sik Kim, Moonyong Lee, Young Bum Koh, Byeong Yun Nam, Chan Ouk Jung, Won Jong Yoo, Kyung Shin

    المصدر: Japanese Journal of Applied Physics. 36:4971

    مصطلحات موضوعية: chemistry.chemical_compound, Plasma etching, chemistry, Silicon dioxide, Etching, General Engineering, Analytical chemistry, General Physics and Astronomy, Particle, Wafer, Reactive-ion etching, Inductively coupled plasma, Mass spectrometry

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0e5adcfd4e9c35719ca96f5f6b5b81f0
    https://doi.org/10.1143/jjap.36.4971

    View this record from the Institute of Physics
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