يعرض 1 - 10 نتائج من 63 نتيجة بحث عن '"Byoung-Gue Min"', وقت الاستعلام: 0.93s تنقيح النتائج
  1. 1
    دورية أكاديمية
    X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

    المؤلفون: Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang

    المصدر: Electronics Letters, Vol 60, Iss 10, Pp n/a-n/a (2024)

    مصطلحات موضوعية: microwave amplifiers, monolithic microwave integrated circuit power amplifiers, solid modelling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X

    URL الوصول: https://doaj.org/article/2fb37fe8a39e4199a24bf2067d615ca6

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  2. 2
    دورية أكاديمية
    Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

    المؤلفون: Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung

    المصدر: ETRI Journal, Vol 45, Iss 1, Pp 171-179 (2023)

    مصطلحات موضوعية: gate, hemt, inalas/ingaas, recess, Telecommunication, TK5101-6720, Electronics, TK7800-8360

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1225-6463

    URL الوصول: https://doaj.org/article/28ea7ef4c57f42238c856b7816a0f91b

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  3. 3
    دورية أكاديمية
    Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

    المؤلفون: Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim

    المصدر: Micromachines, Vol 15, Iss 1, p 57 (2023)

    مصطلحات موضوعية: gallium nitride, high-electron-mobility transistor, gate-head, gate-recessed, breakdown voltage, Mechanical engineering and machinery, TJ1-1570

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2072-666X/15/1/57; https://doaj.org/toc/2072-666X

    URL الوصول: https://doaj.org/article/e86c61714af2488490777364a675ffd0

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  4. 4
    دورية أكاديمية
    Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

    المؤلفون: Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim

    المصدر: Micromachines, Vol 14, Iss 6, p 1101 (2023)

    مصطلحات موضوعية: AlGaN/GaN, high-electron-mobility transistor, passivation, HfO2, Mechanical engineering and machinery, TJ1-1570

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2072-666X/14/6/1101; https://doaj.org/toc/2072-666X

    URL الوصول: https://doaj.org/article/ffe92060493d4e6fbdf2b5b59f9bfef5

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  5. 5
    دورية أكاديمية
    W‐Band MMIC chipset in 0.1‐μm mHEMT technology

    المؤلفون: Jong‐Min Lee, Woo‐Jin Chang, Dong Min Kang, Byoung‐Gue Min, Hyung Sup Yoon, Sung‐Jae Chang, Hyun‐Wook Jung, Wansik Kim, Jooyong Jung, Jongpil Kim, Mihui Seo, Sosu Kim

    المصدر: ETRI Journal, Vol 42, Iss 4, Pp 549-561 (2020)

    مصطلحات موضوعية: frequency multiplier, image‐rejection mixer, lna, mhemt, mmic, Telecommunication, TK5101-6720, Electronics, TK7800-8360

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1225-6463

    URL الوصول: https://doaj.org/article/71feb69d343a47ecbb3a7b73b69b0f93

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  6. 6
    دورية أكاديمية
    Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

    المؤلفون: Jun-Ho Lee, Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim

    المصدر: Micromachines, Vol 13, Iss 11, p 1957 (2022)

    مصطلحات موضوعية: GaN, high-electron-mobility transistor, slant-gate, field-plate, breakdown voltage, Mechanical engineering and machinery, TJ1-1570

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2072-666X/13/11/1957; https://doaj.org/toc/2072-666X

    URL الوصول: https://doaj.org/article/38141a7dcb3343f3975e458051812578

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  7. 7
    مؤتمر
    Thermoelectric properties of Co-doped n-type iron silicides prepared by mechanical alloying

    المؤلفون: Byoung-Gue Min, Jae-Dong Shim, Dong-Hi Lee

    المصدر: Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Thermoelectrics Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on. :386-389 1998

    Relation: Seventeenth International Conference on Thermoelectrics. Proceedings ICT98

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  8. 8
    مؤتمر
    Fabrication and characterization of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ based thermoelectric materials by powder-extrusion-sintering technique

    المؤلفون: Byoung-Gue Min, Kyung-Wook Jang, Dow-Bin Hyun, Dong-Hi Lee

    المصدر: XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Thermoelectrics Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on. :76-80 1997

    Relation: XVI ICT '97. Proceedings ICT'97 16th International Conference on Thermoelectrics

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  9. 9
    مؤتمر
    Effect of dispersed Si-phase on thermoelectric properties of FeSi/sub 2/ prepared by mechanical alloying and sintering

    المؤلفون: Byoung-Gue Min, Dong-Hi Lee

    المصدر: XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Thermoelectrics Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on. :315-320 1997

    Relation: XVI ICT '97. Proceedings ICT'97 16th International Conference on Thermoelectrics

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  10. 10
    مؤتمر
    Preparation and characterization of thermoelectric /spl beta/-FeSi2 phase dispersed with Si

    المؤلفون: Byoung-Gue Min, Kyung-Wook Jang, Dong-Hi Lee

    المصدر: Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Thermoelectrics Thermoelectrics, 1996., Fifteenth International Conference on. :67-70 1996

    Relation: Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96

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