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1مؤتمر
المؤلفون: Weber, O., Bogumilowicz, Y., Ernst, T., Hartmann, J.-M., Ducroquet, F., Andrieu, F., Dupre, C., Clavelier, L., C. Le Royer, Cherkashin, N., Hytch, M., Rouchon, D., Dansas, H., Papon, A.-M., Carron, V., Tabone, C., Deleonibus, S.
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :137-140 2005
Relation: International Electron Devices Meeting 2005
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المؤلفون: B. Mohamad, C. Le Royer, F. Rigaud-Minet, C. Piotrowicz, P. Fernandes Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier, J. Buckley, S. Bécu, J. Biscarrat, R. Gwoziecki
المصدر: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0aea8b282ae0079c3e23222bad6d6783
https://doi.org/10.1109/edtm55494.2023.10102971 -
3
المؤلفون: M. -A. Jaud, W. Vandendaele, B. Rrustemi, A. G. Viey, S. Martin, C. Le Royer, L. Vauche, S. Martinie, R. Gwoziecki, R. Modica, F. Iucolano, T. Poiroux
المصدر: IEEE Transactions on Electron Devices. 69:669-674
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المؤلفون: W. Vandendaele, M.-A. Jaud, A. G. Viey, B. Mohamad, C. Le Royer, L. Vauche, A. Constant, R. Modica, F. Iucolano, R. Gwoziecki
المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::66ee6e914fcd7a8351df2159924e7adf
https://doi.org/10.1109/ispsd49238.2022.9813613 -
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المؤلفون: C. Le Royer, B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu, R. Riat, C. Gillot, M. Charles, S. Ruel, P. Pimenta-Barros, N. Posseme, P. Besson, F. Boudaa, C. Vannuffel, W. Vandendaele, A.G. Viey, A. Krakovinsky, M.-A. Jaud, R. Modica, F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli, R. Gwoziecki, V. Sousa
المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::44dbbb3d01be89be8061e02121c4b306
https://doi.org/10.1109/ispsd49238.2022.9813672 -
6دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
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المؤلفون: Matthew Charles, J. Cluzel, A. Krakovinsky, Gerard Ghibaudo, R. Kom Kammeugne, Edwige Bano, Jérôme Biscarrat, Laura Vauche, C. Le Royer, Charles Leroux, F. Gaillard, R. Gwoziecki
المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩مصطلحات موضوعية: Electron mobility, Materials science, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, [SPI]Engineering Sciences [physics], Y-functionNormally-off, 0103 physical sciences, Materials Chemistry, Hardware_INTEGRATEDCIRCUITS, Wafer, DEG, Electrical and Electronic Engineering, Device parameters, 010302 applied physics, [PHYS]Physics [physics], business.industry, Extraction (chemistry), High-electron-mobility-transistor (HEMT), Function (mathematics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Gallium nitride (GaN), Electron mobility2, Optoelectronics, 0210 nano-technology, business, Statistical electrical characterization, Communication channel
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المؤلفون: B. Rrustemi, A. G. Viey, M.-A. Jaud, F. Triozon, W. Vandendaele, C. Leroux, J. Cluzel, S. Martin, C. Le Royer, R. Gwoziecki, R. Modica, F. Iucolano, F. Gaillard, T. Poiroux, G. Ghibaudo
المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5af867dcfe69bddd8c164de72a7ca7a8
https://doi.org/10.1109/essderc53440.2021.9631766 -
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المؤلفون: R. Kom Kammeugne, C. Leroux, T. Mota Frutuoso, J. Cluzel, L. Vauche, C. Le Royer, R. Gwoziecki, X. Garros, F. Gaillard, M. Charles, E. Bano, G. Ghibaudo
المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6d94ca0e60d5a44939ec6f9faa39f86
https://doi.org/10.1109/essderc53440.2021.9631820 -
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المؤلفون: William Vandendaele, A. G. Viey, C. Le Royer, R. Modica, Erwan Morvan, Laura Vauche, Sebastien Martinie, Marie-Anne Jaud, Steve W. Martin, R. Gwoziecki, Thierry Poiroux, Ferdinando Iucolano, Marc Plissonnier, B. Rrustemi
المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Gate length, 02 engineering and technology, Integrated circuit, 01 natural sciences, Threshold voltage, law.invention, law, Logic gate, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Conduction band, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7ceec7602716bedc3c5cc00fc7a9db9c
https://doi.org/10.23919/ispsd50666.2021.9452257