يعرض 1 - 10 نتائج من 307 نتيجة بحث عن '"C. Le Royer"', وقت الاستعلام: 0.88s تنقيح النتائج
  1. 1
    مؤتمر
    Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

    المؤلفون: Weber, O., Bogumilowicz, Y., Ernst, T., Hartmann, J.-M., Ducroquet, F., Andrieu, F., Dupre, C., Clavelier, L., C. Le Royer, Cherkashin, N., Hytch, M., Rouchon, D., Dansas, H., Papon, A.-M., Carron, V., Tabone, C., Deleonibus, S.

    المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :137-140 2005

    Relation: International Electron Devices Meeting 2005

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  2. 2
    Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

    المؤلفون: B. Mohamad, C. Le Royer, F. Rigaud-Minet, C. Piotrowicz, P. Fernandes Paes Pinto Rocha, C. Leurquin, W. Vandendaele, R. Escoffier, J. Buckley, S. Bécu, J. Biscarrat, R. Gwoziecki

    المصدر: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0aea8b282ae0079c3e23222bad6d6783
    https://doi.org/10.1109/edtm55494.2023.10102971

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  3. 3
    Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

    المؤلفون: M. -A. Jaud, W. Vandendaele, B. Rrustemi, A. G. Viey, S. Martin, C. Le Royer, L. Vauche, S. Martinie, R. Gwoziecki, R. Modica, F. Iucolano, T. Poiroux

    المصدر: IEEE Transactions on Electron Devices. 69:669-674

    مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c2f7c760d90e820c1a34e49ba5a86508
    https://doi.org/10.1109/ted.2021.3136150

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  4. 4
    Role of free holes in nBTI degradation in GaN-on-Si MOS-channel HEMTs

    المؤلفون: W. Vandendaele, M.-A. Jaud, A. G. Viey, B. Mohamad, C. Le Royer, L. Vauche, A. Constant, R. Modica, F. Iucolano, R. Gwoziecki

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::66ee6e914fcd7a8351df2159924e7adf
    https://doi.org/10.1109/ispsd49238.2022.9813613

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  5. 5
    Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

    المؤلفون: C. Le Royer, B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu, R. Riat, C. Gillot, M. Charles, S. Ruel, P. Pimenta-Barros, N. Posseme, P. Besson, F. Boudaa, C. Vannuffel, W. Vandendaele, A.G. Viey, A. Krakovinsky, M.-A. Jaud, R. Modica, F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli, R. Gwoziecki, V. Sousa

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::44dbbb3d01be89be8061e02121c4b306
    https://doi.org/10.1109/ispsd49238.2022.9813672

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  6. 6
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

    View record in Scopus
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  7. 7
    Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function

    المؤلفون: Matthew Charles, J. Cluzel, A. Krakovinsky, Gerard Ghibaudo, R. Kom Kammeugne, Edwige Bano, Jérôme Biscarrat, Laura Vauche, C. Le Royer, Charles Leroux, F. Gaillard, R. Gwoziecki

    المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
    Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩

    مصطلحات موضوعية: Electron mobility, Materials science, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, [SPI]Engineering Sciences [physics], Y-functionNormally-off, 0103 physical sciences, Materials Chemistry, Hardware_INTEGRATEDCIRCUITS, Wafer, DEG, Electrical and Electronic Engineering, Device parameters, 010302 applied physics, [PHYS]Physics [physics], business.industry, Extraction (chemistry), High-electron-mobility-transistor (HEMT), Function (mathematics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Gallium nitride (GaN), Electron mobility2, Optoelectronics, 0210 nano-technology, business, Statistical electrical characterization, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfe9b23ea7e05f05860d196b5de0dc03
    https://hal-cea.archives-ouvertes.fr/cea-03250807

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  8. 8
    Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface

    المؤلفون: B. Rrustemi, A. G. Viey, M.-A. Jaud, F. Triozon, W. Vandendaele, C. Leroux, J. Cluzel, S. Martin, C. Le Royer, R. Gwoziecki, R. Modica, F. Iucolano, F. Gaillard, T. Poiroux, G. Ghibaudo

    المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5af867dcfe69bddd8c164de72a7ca7a8
    https://doi.org/10.1109/essderc53440.2021.9631766

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  9. 9
    Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs

    المؤلفون: R. Kom Kammeugne, C. Leroux, T. Mota Frutuoso, J. Cluzel, L. Vauche, C. Le Royer, R. Gwoziecki, X. Garros, F. Gaillard, M. Charles, E. Bano, G. Ghibaudo

    المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6d94ca0e60d5a44939ec6f9faa39f86
    https://doi.org/10.1109/essderc53440.2021.9631820

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  10. 10
    In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs

    المؤلفون: William Vandendaele, A. G. Viey, C. Le Royer, R. Modica, Erwan Morvan, Laura Vauche, Sebastien Martinie, Marie-Anne Jaud, Steve W. Martin, R. Gwoziecki, Thierry Poiroux, Ferdinando Iucolano, Marc Plissonnier, B. Rrustemi

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Gate length, 02 engineering and technology, Integrated circuit, 01 natural sciences, Threshold voltage, law.invention, law, Logic gate, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Conduction band, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7ceec7602716bedc3c5cc00fc7a9db9c
    https://doi.org/10.23919/ispsd50666.2021.9452257

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