يعرض 1 - 10 نتائج من 216 نتيجة بحث عن '"CUI Jiawei"', وقت الاستعلام: 1.06s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Palynological records and paleoclimatic significance during the middle and late Late Pleistocene in the Qingshuihe Basin, Ningxia

    المؤلفون: WEI Lijie, LI Zhenhong, LI Mingtao, DONG Xiaopeng, CUI Jiawei, KOU Linlin

    المصدر: Dizhi lixue xuebao, Vol 29, Iss 5, Pp 662-673 (2023)

    مصطلحات موضوعية: ningxia, qingshuihe basin, middle and late late pleistocene, palynological records, paleovegetation, paleoclimate, Geology, QE1-996.5

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1006-6616

    URL الوصول: https://doaj.org/article/d5be0297c68c46e5bb7063bfeaf8477b

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  2. 2
    دورية أكاديمية
    Stratigraphic sequence characteristics and geochronology research progress of the Cenozoic in the arcuate tectonic belt on the northeastern margin of the Tibet Plateau

    المؤلفون: DONG Xiaopeng, LI Zhenhong, JING Xianghui, CUI Jiawei, HUANG Ting, KOU Linlin

    المصدر: Dizhi lixue xuebao, Vol 29, Iss 4, Pp 465-484 (2023)

    مصطلحات موضوعية: eogene–neogene, geochronology, sedimentary sequence, unconformity, the arcuate tectonic belt along the northeastern margin of the tibet plateau, Geology, QE1-996.5

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1006-6616

    URL الوصول: https://doaj.org/article/56644918860c43929e1c89621ffb181a

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  3. 3
    دورية أكاديمية
    The initial time of the Fen–Wei graben system: Constraints from geochronology of the Qifeng granite porphyry dikes in the Zhongtiaoshan Mountains

    المؤلفون: CUI Jiawei, LI Zhenhong, JING Xianghui, KOU Linlin

    المصدر: Dizhi lixue xuebao, Vol 29, Iss 4, Pp 485-496 (2023)

    مصطلحات موضوعية: zircon u–pb geochronology, geochemistry, granite porphyry dikes, zhongtiaoshan mountains, fen–wei graben system, Geology, QE1-996.5

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1006-6616

    URL الوصول: https://doaj.org/article/eb42fc7a55644d378053725c3f86c2c6

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  4. 4
    مؤتمر
    Suppression of Hot-Electron-Induced Dynamic RON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body

    المؤلفون: Yang, Junjie, Yu, Jingjing, Wu, Yanlin, Cui, Jiawei, Yang, Han, Yang, Xuelin, Zhang, Meng, Shen, Bo, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :530-533 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform

    المؤلفون: Li, Teng, Zhang, Meng, Yu, Jingjing, Cui, Jiawei, Yang, Junjie, Wu, Yanlin, Yang, Han, Zhang, Yamin, Yang, Xuelin, Wang, Maojun, Feng, Shiwei, Shen, Bo, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :160-163 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection

    المؤلفون: Yang, Junjie, Yu, Jingjing, Cui, Jiawei, Li, Teng, Lao, Yunhong, Yang, Xuelin, Shen, Bo, Liu, Xiaosen, Wang, Yan, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :287-290 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Design and Development of p-GaN Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

    المؤلفون: Yu, Jingjing, Yang, Junjie, Wu, Yanlin, Li, Teng, Cui, Jiawei, Shen, Bo, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :263-266 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    مؤتمر
    Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

    المؤلفون: Lao, Yunhong, Nuo, Muqin, Zheng, Qian, Cui, Jiawei, Yang, Junjie, Liu, Sihang, Shen, Bo, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :534-537 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  9. 9
    دورية أكاديمية
    The age sequence of the detrital zircons from the Guanyindian section in Longde, the northeastern margin of the Tibetan Plateau, and its geological significance

    المؤلفون: KOU Linlin, LI Zhenhong, DONG Xiaopeng, CUI Jiawei, LI Hailong

    المصدر: Dizhi lixue xuebao, Vol 27, Iss 6, Pp 1051-1064 (2021)

    مصطلحات موضوعية: paleogene, qingshuiying formation, detrital zircon age sequence, guanyindian section in longde, northeastern margin of the qinghai-tibet plateau, Geology, QE1-996.5

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1006-6616

    URL الوصول: https://doaj.org/article/e9183e4e02c0410e9914419722942414

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  10. 10
    مؤتمر
    6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultralow Dynamic RON

    المؤلفون: Cui, Jiawei, Wei, Jin, Wang, Maojun, Wu, Yanlin, Yang, Junjie, Li, Teng, Yu, Jingjing, Yang, Han, Yang, Xuelin, Wang, Jinyan, Liu, Xiaosen, Ueda, Daisuke, Shen, Bo

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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