يعرض 1 - 10 نتائج من 15 نتيجة بحث عن '"Chadwin Young"', وقت الاستعلام: 1.03s تنقيح النتائج
  1. 1
    مؤتمر
    Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET

    المؤلفون: Weize Xiong, Chadwin Young, Matthew, K., Cleavelin, C.R., Schulz, T., Schruefer, K., Patruno, P.

    المصدر: 2006 IEEE International Conference on IC Design and Technology Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on. :1-3 2006

    Relation: 2006 IEEE International Conference on IC Design and Technology

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  2. 2
    مؤتمر
    Comparison of novel BTI measurements for high-k dielectric MOSFETs

    المؤلفون: Rino Choi, Dawei Heh, Chang Yong Kang, Chadwin Young, Bersuker, G., Byoung Hun Lee

    المصدر: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on. :1117-1118 Oct, 2006

    Relation: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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  3. 3
    Performance Investigation of Low-Temperature Processed Igzo-Based Thin-Film Transistors with Al2o3 Gate Dielectrics for Backend Integration

    المؤلفون: Rodolfo Antonio Rodriguez Davila, Kian Nawaby, Santiago Ponciano Valdez, Manuel Quevedo-Lopez, Chadwin Young

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cf6ae09aef361588f5be1c2b22e30bdc
    https://doi.org/10.2139/ssrn.4437919

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  4. 4
    Low Temperature, Highly Stable Zno Thin-Film Transistors

    المؤلفون: Rodolfo Antonio Rodriguez Davila, Richard Chapman, Zeshaan H. Shamsi, S. J. Castillo, Chadwin Young, Manuel Quevedo-Lopez

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b5889a45d45ed70d19d44b1f8f8f9b89
    https://doi.org/10.2139/ssrn.4427676

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  5. 5
    2D materials in electronics devices

    المؤلفون: Chadwin Young, Matt Ring, Jim Lloyd, Avyaya Jayanthinarasimham, Charles LaRow, Alexander Shluger, Marco A. Villena

    المصدر: 2017 IEEE International Integrated Reliability Workshop (IIRW).

    مصطلحات موضوعية: Computer science, Compatibility (mechanics), Systems engineering, Electronics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::556a36b76506e37baed232ff12aba40d
    https://doi.org/10.1109/iirw.2017.8361246

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  6. 6
    Reliability and modeling: What to simulate and how?

    المؤلفون: Rui Zhang, Giovanni Verzellesi, Giuseppina Puzzilli, Katja Puschkarsky, Charles LaRow, Alexander Shluger, Yuri Tkachev, Marco A. Villena, Kexin Yang, Elnatan Metaev, Milan Pesic, Jim Lloyd, Matt Ring, Peter Paliwoda, Sheldon Tan, Chadwin Young

    المصدر: 2017 IEEE International Integrated Reliability Workshop (IIRW).

    مصطلحات موضوعية: 010302 applied physics, Computer science, 0103 physical sciences, 02 engineering and technology, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences, Reliability (statistics), Reliability engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1eeebcf4b2b572d8082e88ed58cdc082
    https://doi.org/10.1109/iirw.2017.8361248

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  7. 7
    Channel Mobility

    المؤلفون: Chadwin Young

    المصدر: High Permittivity Gate Dielectric Materials ISBN: 9783642365348

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b67c3ad144fcd8b87f52fc448d9f1f31
    https://doi.org/10.1007/978-3-642-36535-5_7

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  8. 8
    Foreword

    المؤلفون: Chadwin Young

    المصدر: 2010 IEEE International Integrated Reliability Workshop Final Report.

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::748a9333ed3973073c76328df94c012b
    https://doi.org/10.1109/iirw.2010.5706470

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  9. 9
    Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

    المؤلفون: Chadwin Young

    المصدر: Scopus-Elsevier
    Web of Science

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::19600b2b0b1037c7de64ad3a34970f55
    http://www.scopus.com/inward/record.url?eid=2-s2.0-3042855582&partnerID=MN8TOARS

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  10. 10
    The Impact of La-doping on the Reliability of Low V-th High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions

    المؤلفون: Kang, C. Y., Chadwin Young, Huang, J., Kirsch, P., Heh, D., Sivasubramani, P., Park, H. K., Bersuker, G., Lee, B. H., Choi, H. S., Lee, K. T., Jeong, Y-H, Lichtenwalner, J., Kingon, A. I., Tseng, H-H, Jammy, R.

    المصدر: Publons
    Web of Science

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::46a16b41c38717b77f7b19aa54b3b89f
    https://publons.com/publon/12269256/

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