يعرض 1 - 10 نتائج من 326 نتيجة بحث عن '"Chang, E. Y."', وقت الاستعلام: 1.08s تنقيح النتائج
  1. 1
    مؤتمر
    Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT

    المؤلفون: Wu, J.-S., Liao, P.-H., Chang, S.-J., Yang, T.-Y., Teng, C.-Y., Liang, Y.-K., Panda, D., Luc, Q. H., Chang, E. Y.

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :847-850 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer

    المؤلفون: Lin, Y., Chiu, Y. S., Chang, E. Y.

    المصدر: 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA) Engineering Technologies and Applications (IET-ICETA), 2022 IET International Conference on. :1-2 Oct, 2022

    Relation: 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)

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  3. 3
    مؤتمر
    Optimization of gate insulator material for GaN MIS-HEMT

    المؤلفون: Lin, Y. C., Lin, T. W., Wu, C. H., Yao, J. N., Hsu, H. T., Shih, W. C., Kakushima, K., Tsutsui, K., Iwai, H., Chang, E. Y.

    المصدر: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :115-118 Jun, 2016

    Relation: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate

    المؤلفون: Wong, Y. Y., Huang, S. C., Huang, W. C., Lumbantoruan, F., Chiu, Y. S., Wang, H. C., Yu, H. W., Chang, E. Y.

    المصدر: 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Semiconductor Electronics (ICSE), 2014 IEEE International Conference on. :358-361 Aug, 2014

    Relation: 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE)

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  5. 5
    مؤتمر
    First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

    المؤلفون: Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., Chang, E. Y.

    المصدر: 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :47-48 Jun, 2018

    Relation: 2018 IEEE Symposium on VLSI Technology

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  6. 6
    مؤتمر
    Improved reliability of GaN HEMTs using N2 plasma surface treatment

    المؤلفون: Liu, S. C., Dai, G. M., Chang, E. Y.

    المصدر: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the. :378-380 Jun, 2015

    Relation: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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  7. 7
    مؤتمر
    Thermal analysis and electrical performance of packaged AlGaN/GaN power HEMTs

    المؤلفون: Chou, Po-Chien, Cheng, Stone, Chieng, Wei-Hua, Chang, E. Y., Chou, Hsin-Ping

    المصدر: 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on. :517-520 Apr, 2013

    Relation: 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013)

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  8. 8
    دورية أكاديمية
    Projected Efficiency of Polarization-Matched p-In$_{\bm x}$ Ga$_{\bm {1-x}}$N/i-In $_{\bm y}$Ga$_{\bm{1-y}}$N/n-GaN Double Heterojunction Solar Cells

    المؤلفون: Wang, H.-W., Yu, P., Wu, Y.-R., Kuo, H.-C., Chang, E. Y., Lin, S.-H.

    المصدر: IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 3(3):985-990 Jul, 2013

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  9. 9
    دورية أكاديمية
    Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures

    المؤلفون: Trinh, H. D., Lin, Y. C., Chang, E. Y., Lee, C.-T., Wang, S.-Y., Nguyen, H. Q., Chiu, Y. S., Luc, Q. H., Chang, H.-C., Lin, C.-H., Jang, S., Diaz, C. H.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(5):1555-1560 May, 2013

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  10. 10
    دورية أكاديمية
    In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

    المؤلفون: Nguyen, H. Q., Trinh, H. D., Chang, E. Y., Lee, C. T., Wang, S. Y., Yu, H. W., Hsu, C. H., Nguyen, C. L.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(1):235-240 Jan, 2013

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