يعرض 1 - 10 نتائج من 2,331 نتيجة بحث عن '"Chen, T. J."', وقت الاستعلام: 1.80s تنقيح النتائج
  1. 1
    مؤتمر
    A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

    المؤلفون: Lin, L. C., Hsieh, E R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J., Cheng, O.

    المصدر: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022

    Relation: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

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  2. 2
    دورية أكاديمية
    Enhancement of strength–ductility synergy in heterostructured 2024Al alloy through tailoring heterogeneity level

    المؤلفون: Liu, G. F., Chen, T. J.Aff1, IDs10853023087525_cor2

    المصدر: Journal of Materials Science. 58(28):11820-11839

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  3. 3
    مؤتمر
    The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

    المؤلفون: Hsieh, E R., Tsai, W. L., Lin, Y. L., Liu, C. H., Chung, S. S., Tang, Y. T., Su, J. R., Chen, T. P., Huang, S. A., Chen, T. J., Cheng, O.

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  4. 4
    دورية أكاديمية
    Effect of Ball-Milling Process on Microstructures and Mechanical Properties of Heterostructured 2024Al Alloy Prepared by Powder Thixoforming

    المؤلفون: Liu, G. F., Chen, T. J.Aff1, IDs12540022011896_cor2

    المصدر: Metals and Materials International. 28(12):2919-2933

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  5. 5
    مؤتمر
    Using Authentic Leadership and mindfulness as internal marketing mechanism for enhancing proactive customer service performance

    المؤلفون: Wu, C. M., Chen, T. J., Lee, Y. D., Chen, T. F.

    المصدر: 2016 IEEE International Conference on Management of Innovation and Technology (ICMIT) Management of Innovation and Technology (ICMIT), 2016 IEEE International Conference on. :37-42 Sep, 2016

    Relation: 2016 IEEE International Conference on Management of Innovation and Technology (ICMIT)

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  6. 6
    مؤتمر
    A Novel Approach to Localize the Channel Temperature Induced by the Self-heating Effect in 14nm High-k Metal-gate FinFET

    المؤلفون: Hsieh, E. R., Jiang, M. J., Chen, H. W., Lin, J. L., Chung, Steve S., Chen, T. P., Yeah, Y. H., Chen, T. J., Cheng, Osbert

    المصدر: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :148-150 Mar, 2018

    Relation: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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  7. 7
    مؤتمر
    Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG)

    المؤلفون: Xiao, Y., Hsieh, E. R., Chung, Steve S., Chen, T. R, Huang, S. A., Chen, T. J., Cheng, Osbert

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :21.5.1-21.5.4 Dec, 2019

    Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

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  8. 8
    مؤتمر
    A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 1012 Endurance

    المؤلفون: Hsieh, E. R., Chang, H. Y., Chung, Steve S., Chen, T. P., Huang, S. A., Chen, T. J., Cheng, Osbert, Wong, S. Simon

    المصدر: 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T138-T139 Jun, 2019

    Relation: 2019 Symposium on VLSI Technology

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  9. 9
    مؤتمر
    Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

    المؤلفون: Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, Steve S., Chen, T. P., Huang, S.A., Chen, T. J., Cheng, Osbert

    المصدر: 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T118-T119 Jun, 2019

    Relation: 2019 Symposium on VLSI Technology

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  10. 10
    مؤتمر
    The Guideline on Designing a High Performance NC MOSFET by Matching the Gate Capacitance and Mobility Enhancement

    المؤلفون: Luo, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H., Chung, Steve S., Chen, T. P., Huang, S. A., Chen, T. J., Chenz, Osbert

    المصدر: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2019 International Symposium on. :1-2 Apr, 2019

    Relation: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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