يعرض 1 - 2 نتائج من 2 نتيجة بحث عن '"Chen Yao-hai"', وقت الاستعلام: 0.71s تنقيح النتائج
  1. 1
    مؤتمر
    The effect of base dopant out-diffusion and undoped SiGe or Si spacer layers at both sides of the base on the characteristics of microwave Si/SiGe/Si HBT's

    المؤلفون: Zhang Wan-rong, Liu Hai-jiang, Wang Li-xin, Wang Dong, Li Zhi-guo, Chen Yao-hai, Chen Jianxin, Shen Guang-di

    المصدر: 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. Microwave and millimeter wave technology Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on. :66-69 2002

    Relation: Proceedings of 3rd International Conference on Microwave and Millimeter Wave Technology

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  2. 2
    The effect of base dopant out-diffusion and undoped SiGe or Si spacer layers at both sides of the base on the characteristics of microwave Si/SiGe/Si HBT's

    المؤلفون: Zhang Wan-rong, Liu Hai-jiang, Li Zhiguo, Shen Guang-di, Chen Jianxin, Wang Li-xin, Wang Dong, Chen Yao-hai

    المصدر: 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..

    مصطلحات موضوعية: Materials science, Silicon, Dopant, business.industry, Heterojunction bipolar transistor, Doping, chemistry.chemical_element, chemistry, Electronic engineering, Optoelectronics, business, Base (exponentiation), Layer (electronics), Microwave, Common emitter

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::00c8a533390697894fd04272ec30befc
    https://doi.org/10.1109/icmmt.2002.1187636

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