المؤلفون: Chihak Ahn, Yutaka Nishizawa, Woosung Choi

المصدر: AIP Advances, Vol 10, Iss 1, Pp 015111-015111-6 (2020)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/152bf9f02bc04cf4b47108c0278dffc5

المؤلفون: Park, Hong-Hyun, Chihak Ahn, Woosung Choi, Keun-Ho Lee, Youngkwan Park

المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on. :12-15 Sep, 2015

Relation: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

المؤلفون: Dunham, Scott T., Hsiu-Wu Guo, Jakyoung Song, Chihak Ahn

المصدر: 2008 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on. :333-336 Sep, 2008

Relation: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008)

المؤلفون: Hsiu-Wu Guo, Dunham, S.T., Chen-Luen Shih, Chihak Ahn

المصدر: 2006 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2006 International Conference on. :71-74 Sep, 2006

Relation: 2006 International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Chihak Ahn, Dunham, S.T.

المصدر: 2006 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2006 International Conference on. :83-86 Sep, 2006

Relation: 2006 International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Chihak Ahn, Inkook Jang, Keun-Ho Lee, Dae Sin Kim, Seon-Young Lee, Alexander Schmidt, Renyu Chen, Woosung Choi

المصدر: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

مصطلحات موضوعية: 010302 applied physics, Materials science, Contact resistance, Transistor, Semiconductor device modeling, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, law.invention, chemistry.chemical_compound, Atomic layer deposition, chemistry, law, 0103 physical sciences, Silicide, Performance prediction, Electronic engineering, Process simulation, Diffusion (business), 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4931d493a845e0f414503f79027e5697
https://doi.org/10.1109/sispad.2016.7605158

المؤلفون: Jef Poortmans, Chihak Ahn, N. E. B. Cowern, Hariharsudan Sivaramakrishnan Radhakrishnan, Jan Van Hoeymissen, Robert Mertens, Kris Van Nieuwenhuysen, Frederic Dross, Ivan Gordon

المصدر: physica status solidi (a). 209:1866-1871

مصطلحات موضوعية: Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, Surfaces and Interfaces, Condensed Matter Physics, Epitaxy, Porous silicon, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Active layer, Metal, Crystallography, Transition metal, chemistry, Getter, visual_art, Materials Chemistry, visual_art.visual_art_medium, Wafer, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::22219fd3496f3c2a98f003d444f37317
https://doi.org/10.1002/pssa.201200232

المؤلفون: Chihak Ahn, Y. Lai, Nick Bennett, Nicolas Cordero, James C. Greer, Nick E. B. Cowern

المصدر: Solid-State Electronics. 53:1173-1176

مصطلحات موضوعية: Materials science, Silicon, Dopant, Doping, chemistry.chemical_element, Strained silicon, Dopant Activation, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, chemistry, Antimony, Chemical physics, Metastability, Materials Chemistry, Electronic engineering, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f56473d4c27c82e099d6b40756b6a850
https://doi.org/10.1016/j.sse.2009.08.003

المؤلفون: Chihak Ahn, Nick Bennett, Peter Pichler, N. E. B. Cowern

المصدر: Solid State Phenomena. :173-180

مصطلحات موضوعية: Materials science, Condensed matter physics, Dopant, Silicon, Doping, Fermi level, chemistry.chemical_element, Nanotechnology, Germanium, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, symbols.namesake, chemistry, symbols, General Materials Science, Charge carrier

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ef9057751e5c7f520c6b60a813743bd6
https://doi.org/10.4028/www.scientific.net/ssp.156-158.173

المؤلفون: Chihak Ahn, Keun-Ho Lee, Hong-Hyun Park, Woosung Choi, Young-Kwan Park

المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

مصطلحات موضوعية: Condensed Matter::Materials Science, Materials science, Silicon, chemistry, chemistry.chemical_element, Mechanics, Semiconductor device, Valence force field, Finite element method, Mathematics::Numerical Analysis, Computational physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1450f2bb8d62095b255cfabf25251284
https://doi.org/10.1109/sispad.2015.7292246