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1مؤتمر
المؤلفون: Kwan-Yong Lim, Hyunjung Lee, Choongryul Ryu, Kang-Ill Seo, Uihui Kwon, Seokhoon Kim, Jongwan Choi, Kyungseok Oh, Hee-Kyung Jeon, Chulgi Song, Tae-Ouk Kwon, Jinyeong Cho, Seunghun Lee, Yangsoo Sohn, Hong Sik Yoon, Junghyun Park, Kwanheum Lee, Wookje Kim, Eunha Lee, Sang-Pil Sim, Chung Geun Koh, Sang Bom Kang, Siyoung Choi, Chilhee Chung
المصدر: 2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :10.1.1-10.1.4 Dec, 2010
Relation: 2010 IEEE International Electron Devices Meeting (IEDM)
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المؤلفون: Kang-ill Seo, Jongwan Choi, Sang-pil Sim, Yangsoo Sohn, Seung-Hun Lee, Kwan-Heum Lee, Si-Young Choi, Chulgi Song, Kyungseok Oh, Junghyun Park, Choongryul Ryu, Tae-Ouk Kwon, Chilhee Chung, Hyun-Jung Lee, Sang Bom Kang, Hee-Kyung Jeon, Wookje Kim, Seok-Hoon Kim, Kwan-Yong Lim, Uihui Kwon, Hong-Sik Yoon, Chung Geun Koh, Jinyeong Cho, Eunha Lee
المصدر: 2010 International Electron Devices Meeting.
مصطلحات موضوعية: Stress (mechanics), Materials science, business.industry, Logic gate, Electrical engineering, Optoelectronics, D region, Dislocation, business, Metal gate, High electron, High-κ dielectric, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::02e6b4230fa3503bbb1506cff204de55
https://doi.org/10.1109/iedm.2010.5703332