يعرض 1 - 10 نتائج من 78 نتيجة بحث عن '"Christian Dussarrat"', وقت الاستعلام: 0.92s تنقيح النتائج
  1. 1
    دورية أكاديمية
    High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    المؤلفون: Jesús Cañas, Daniel F. Reyes, Alter Zakhtser, Christian Dussarrat, Takashi Teramoto, Marina Gutiérrez, Etienne Gheeraert

    المصدر: Nanomaterials, Vol 12, Iss 23, p 4125 (2022)

    مصطلحات موضوعية: silicon oxide, diamond, interface, band-gap, band-offset, EELS, Chemistry, QD1-999

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2079-4991/12/23/4125; https://doaj.org/toc/2079-4991

    URL الوصول: https://doaj.org/article/25f2b694eca14108806935c21e976869

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  2. 2
    Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

    المؤلفون: Matthieu Weber, Nils Boysen, Octavio Graniel, Abderrahime Sekkat, Christian Dussarrat, Paulo Wiff, Anjana Devi, David Muñoz-Rojas

    المساهمون: Publica

    مصطلحات موضوعية: Biomaterials, Polymers and Plastics, synthesis, green chemistry, spatial ALD, atomic layer deposition, Materials Chemistry, precursors, Electronic, Optical and Magnetic Materials

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cc67cce60d43949bd512dcd69ec66fc

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  3. 3
    Nf3 And F2 Gas Fluorination of Gan Surface and Pt/Gan Interface Analyzed by Hard X-Ray Photoelectron Spectroscopy

    المؤلفون: Asahiko Matsuda, Takashi Teramoto, Takahiro Nagata, Dominic Gerlach, Peng Shen, S. Ueda, Takako Kimura, Christian Dussarrat, Toyohiro CHIKYO

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d2d64f18b0a3de0859ece388015831ad
    https://doi.org/10.2139/ssrn.4409130

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  4. 4
    High-Quality

    المؤلفون: Jesús, Cañas, Daniel F, Reyes, Alter, Zakhtser, Christian, Dussarrat, Takashi, Teramoto, Marina, Gutiérrez, Etienne, Gheeraert

    المصدر: Nanomaterials (Basel, Switzerland). 12(23)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid________::2e140722de8d4c56061570e152fa3b10
    https://pubmed.ncbi.nlm.nih.gov/36500747

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  5. 5
    High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2Gate Dielectric

    المؤلفون: Yongpeng Zhang, Christian Dussarrat, Jie Qi, Wenqing Zhu, Jun Yang, Qianqian Wu, Jianhua Zhang, Xingwei Ding

    المصدر: IEEE Transactions on Electron Devices. 66:3382-3386

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Gate dielectric, Field effect, Dielectric, 01 natural sciences, Nanocrystalline material, Electronic, Optical and Magnetic Materials, Indium tin oxide, Atomic layer deposition, Hysteresis, Thin-film transistor, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e9b8ded13545e5f73cb5b07beb9138b0
    https://doi.org/10.1109/ted.2019.2924135

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  6. 6
    Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

    المؤلفون: Philippe Lefaucheux, Christian Dussarrat, R. Chanson, Jean-Francois de Marneffe, Thomas Tillocher, Remi Dussart

    المصدر: Frontiers of Chemical Science and Engineering. 13:511-516

    مصطلحات موضوعية: 010302 applied physics, Work (thermodynamics), Materials science, General Chemical Engineering, Nuclear engineering, Condensation, 02 engineering and technology, Plasma, RC time constant, 021001 nanoscience & nanotechnology, 01 natural sciences, Etching (microfabrication), 0103 physical sciences, 0210 nano-technology, Porosity, Cryogenic temperature

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d5c084f06f61a104f7392faba3f73db7
    https://doi.org/10.1007/s11705-019-1820-5

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  7. 7
    Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone

    المؤلفون: Hanearl Jung, Woo-Hee Kim, Jae Min Myoung, Whang Je Woo, Hyungjun Kim, Bo Eun Park, Yun Cheol Kim, Christian Dussarrat, Satoko Gatineau, Il Kwon Oh, Su Jeong Lee

    المصدر: ACS Applied Materials & Interfaces. 10:2143-2150

    مصطلحات موضوعية: 010302 applied physics, Materials science, Passivation, business.industry, Transistor, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, law.invention, Atomic layer deposition, law, Thin-film transistor, 0103 physical sciences, Degradation (geology), Optoelectronics, General Materials Science, 0210 nano-technology, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8c2229acb608313c10db4b7a33f7c198
    https://doi.org/10.1021/acsami.7b14260

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  8. 8
    Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

    المؤلفون: Jamie Greer, Ono Takashi, Wontae Noh, Sunao Kamimura, Takashi Teramoto, Christian Dussarrat, Nicolas Blasco, Nicolas Gosset, Jooho Lee

    المصدر: Coatings, Vol 11, Iss 497, p 497 (2021)
    Coatings
    Volume 11
    Issue 5

    مصطلحات موضوعية: Materials science, Oxide, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Oxygen, Contact angle, Atomic layer deposition, chemistry.chemical_compound, yttrium oxide, X-ray photoelectron spectroscopy, thermal atomic layer deposition, Materials Chemistry, Silicon oxide, water contact angle, heteroleptic precursor, Surfaces and Interfaces, Yttrium, Engineering (General). Civil engineering (General), 021001 nanoscience & nanotechnology, plasma-resistant coating, 0104 chemical sciences, Surfaces, Coatings and Films, chemistry, Chemical engineering, Silicon nitride, TA1-2040, 0210 nano-technology

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49019217b974e847229a6953eb222197
    https://doi.org/10.3390/coatings11050497

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  9. 9
    Comparative study of two Atomic Layer Etching processes for GaN

    المؤلفون: Thierry Chevolleau, Takashi Teramoto, Christian Dussarrat, Etienne Gheeraert, H. Mariette, Christophe Durand, Christophe Vallée, C. Mannequin, Katsuhiro Akimoto

    المساهمون: Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NEEL - NPSC), Université de Tsukuba = University of Tsukuba, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Centre Technique des Applications du Soudage (CTAS), Air Liquide [Siège Social], Air Liquide Laboratories, Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Matériaux et Mécanique des Composants (EDF R&D MMC), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Semi-conducteurs à large bande interdite (SC2G), Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères] (LIPhy ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Semi-conducteurs à large bande interdite (SC2G ), Clot, Marielle

    المصدر: 19th International Conference on Atomic layer Deposition (ALD2019)
    19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue, United States
    Journal of Vacuum Science & Technology A
    Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩
    Journal of Vacuum Science and Technology A
    Journal of Vacuum Science and Technology A, American Vacuum Society, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩

    مصطلحات موضوعية: Materials science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 02 engineering and technology, Photoresist, 01 natural sciences, 7. Clean energy, Ion, Adsorption, Etching (microfabrication), [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], 0103 physical sciences, Monolayer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Surfaces and Interfaces, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Nanolithography, Optoelectronics, 0210 nano-technology, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c834170315838330cf6e7b073a54b274
    https://hal.univ-grenoble-alpes.fr/hal-02338959

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  10. 10
    Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y

    المؤلفون: Hanearl, Jung, Woo-Hee, Kim, Bo-Eun, Park, Whang Je, Woo, Il-Kwon, Oh, Su Jeong, Lee, Yun Cheol, Kim, Jae-Min, Myoung, Satoko, Gatineau, Christian, Dussarrat, Hyungjun, Kim

    المصدر: ACS applied materialsinterfaces. 10(2)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid________::e593cb93e56f99b7a764ff8c7a5ac9db
    https://pubmed.ncbi.nlm.nih.gov/29277990

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